2SC3646S-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3646S-TD-E is a single NPN silicon bipolar junction transistor housed in a PCP (SOT-89) surface-mount package. It features a maximum collector-emitter voltage of 100 V and a continuous collector current rating of 1 A. The device offers a gain-bandwidth product of 120 MHz and supports a pulse collector current of 2 A. Power dissipation is rated at 500 mW under standard conditions, extending to 1.3 W when mounted on a ceramic substrate. The component operates within a junction temperature range up to 150 °C.

Single Bipolar Transistors Feature Summary

• Adopts FBET and MBIT processes for enhanced performance
• Provides high breakdown voltage and large current capacity
• Features fast switching speed characteristics
• Ultrasmall size facilitates high-density hybrid IC integration

Single Bipolar Transistors Applications

• High-density small-sized hybrid ICs
• Low-frequency general-purpose amplifiers
• Muting applications

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (e.g., 'S' for 100-200 gain) against design requirements. Confirm RoHS compliance and Pb-free status as per the datasheet. Ensure thermal management aligns with the 500 mW or 1.3 W dissipation ratings depending on the PCB substrate used. Validate pinout compatibility with the SOT-89/PCP-1 footprint.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring a compact NPN transistor with 100 V blocking capability and 1 A current handling. Consider the 120 MHz transition frequency for suitable bandwidth needs. Evaluate the ultrasmall PCP package constraints for board space limitations. Compare saturation voltage specifications against load requirements to ensure efficient operation.

Single Bipolar Transistors Part Context

This part belongs to the 2SC3646 series, manufactured by onsemi. It is the NPN counterpart to the 2SA1416 PNP transistor. Both devices share identical electrical characteristics and physical dimensions, designed for complementary push-pull configurations in low-voltage, high-speed switching and amplification circuits.

Single Bipolar Transistors Replacement Considerations

The 2SA1416S-TD-E serves as the complementary PNP device within the same family. Verify pinout orientation and polarity differences when substituting. Cross-reference with other NPN transistors in the PCP package if sourcing alternatives, ensuring matching voltage and current ratings.