2SC3646T-P-TD-E

$0.21

Description：TRANS NPN 100V 1A PCP
Series：-

SKU:56277a0982aa Category: Single Bipolar Transistors Brand: onsemi

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

2SC3646T-P-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 100V 1A PCP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC3646T-P-TD-E

Description：TRANS NPN 100V 1A PCP
Series：-
Mfr：onsemi
Package：Tape & Reel (TR),Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：100 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 40mA, 400mA
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100mA, 5V
Power - Max：500 mW
Frequency - Transition：120MHz
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：PCP
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SC3646T-P-TD-E

2SC3646T-P-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3646T-P-TD-E is a single NPN bipolar junction transistor (BJT) designed for surface-mount applications. It features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 100 V. The device utilizes the PCP package, equivalent to TO-243AA, with a maximum power dissipation of 500 mW. Key electrical characteristics include a transition frequency of 120 MHz and a minimum DC current gain of 200 at specified test conditions.

Single Bipolar Transistors Feature Summary

High breakdown voltage and large current capacity
Fast switching speed capabilities
Ultrasmall size facilitating high-density hybrid IC integration

Single Bipolar Transistors Applications

High-density small-sized hybrid ICs
General-purpose amplification circuits
Switching applications requiring fast response

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against official manufacturer documentation to confirm exact binning or testing parameters, as standard part numbers may lack this designation in primary datasheets. Ensure compatibility with RoHS3 standards and check moisture sensitivity level classifications prior to procurement.

Single Bipolar Transistors Selection Notes

Select this component when a 1 A NPN transistor with 100 V rating is required in a compact PCP/TO-243AA footprint. Consider the 120 MHz transition frequency for medium-speed switching needs. Verify thermal management requirements for the 500 mW power dissipation limit in the intended application environment.

Single Bipolar Transistors Part Context

This component belongs to the 2SC3646 series, which includes complementary PNP devices like the 2SA1416. The series is characterized by the adoption of FBET and MBIT processes, offering robust performance in low-voltage, high-frequency applications within small surface-mount packages.

Single Bipolar Transistors Replacement Considerations

The 2SC3646T-TD-E is a confirmed substitute within the same series. Verify pinout compatibility and ensure that the alternative part meets the specific 1 A and 100 V requirements of the original design.