2SC3651-OTE-TD-E

Single Bipolar Transistors Overview

The onsemi 2SC3651-OTE-TD-E is a single NPN epitaxial planar silicon bipolar junction transistor (BJT) designed for high-frequency applications. It features a transition frequency of 120 MHz, making it suitable for RF amplifier circuits. The device supports a maximum continuous collector current of 2 A and withstands a collector-emitter breakdown voltage of 100 V. With a power dissipation rating of 500 mW, it operates within a junction temperature range up to +150°C. The component is supplied in a PCP surface-mount package.

Single Bipolar Transistors Feature Summary

• High-frequency performance with a 120 MHz transition frequency for RF amplification
• Robust current handling capability with a 2 A maximum collector current rating
• High voltage tolerance supporting 100 V collector-emitter breakdown
• Compact surface-mount packaging for space-constrained designs

Single Bipolar Transistors Applications

• Radio frequency (RF) amplifier stages
• High-frequency signal processing circuits
• General-purpose switching applications requiring fast response

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'OTE' against the manufacturer's official datasheet to confirm pinout configuration and tape-and-reel specifications. Ensure the ordering code matches the exact package variant required for your PCB footprint. Cross-reference the RoHS compliance status and material declarations with the latest product documentation before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits that require a balance of high current capacity and high-frequency operation. The 100 V rating provides sufficient headroom for many low-voltage RF systems. Consider the thermal management requirements associated with the 500 mW dissipation limit in enclosed environments. Verify compatibility with existing BJT driver stages due to the specific hFE characteristics typical of this series.

Single Bipolar Transistors Part Context

This part belongs to the broader family of onsemi NPN silicon transistors optimized for general-purpose and RF use. It shares architectural similarities with other devices in the 2SC36xx series, which are commonly utilized in consumer electronics and communication equipment. The PCP package offers a compact solution compared to traditional through-hole alternatives, facilitating automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for this specific model were not identified in the provided source data. Engineers should consult the manufacturer's official replacement guide or equivalent parameter matching services to identify compatible alternatives.