2SC3979A

Single Bipolar Transistors Overview

The Panasonic 2SC3979A is a silicon NPN triple diffusion planar power transistor designed for high breakdown voltage and high-speed switching applications. It features a collector-base voltage of 1000 V with the emitter open, and a collector-emitter voltage of 800 V with the base open. The device supports a continuous collector current of 3 A and a peak collector current of 5 A. Maximum collector power dissipation reaches 40 W at a case temperature of 25°C. Key electrical characteristics include a forward current transfer ratio (hFE) minimum of 6 at IC = 0.8 A, and a transition frequency (fT) of 10 MHz at IC = 0.15 A.

Single Bipolar Transistors Feature Summary

• High-speed switching capability suitable for rapid circuit transitions
• High collector-base voltage rating providing robust isolation performance
• Wide safe operation area ensuring reliability under varying load conditions
• Satisfactory linearity of forward current transfer ratio for stable amplification

Single Bipolar Transistors Applications

• High voltage switching circuits
• General electronic equipment
• Communications equipment
• Measuring instruments

Single Bipolar Transistors Procurement Notes

Verify component authenticity against official Panasonic datasheets. Confirm package type matches TO-220F-A1 specifications. Check RoHS compliance status as per EU directive requirements. Ensure storage conditions adhere to specified limits to prevent degradation. Validate pinout configuration before installation to avoid circuit damage.

Single Bipolar Transistors Selection Notes

Select this component when high voltage blocking capability is required alongside moderate current handling. Consider thermal management solutions given the 40 W dissipation rating at 25°C case temperature. Evaluate switching speed requirements against the 10 MHz transition frequency limit. Ensure base drive currents align with saturation voltage specifications for efficient operation.

Single Bipolar Transistors Part Context

This device belongs to the 2SC3979 series of silicon NPN transistors manufactured by Panasonic Electronic Components. It utilizes a triple diffusion planar process technology to achieve its electrical characteristics. The component is housed in a TO-220F-A1 flange mount package, facilitating direct heat sink attachment via a single screw for improved thermal performance.

Single Bipolar Transistors Replacement Considerations

Consult official Panasonic documentation for verified substitute part numbers. Cross-reference absolute maximum ratings and pin configurations carefully. Verify that alternative components meet or exceed the 1000 V collector-base voltage requirement.