Single Bipolar Transistors 2SC4081U3T106S product image

2SC4081U3T106S

$0.17
  • Description:TRANS NPN 50V 0.15A UMT3
  • Series:-

SKU:674ce1fd5a6c Category: Brand:

  
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2SC4081U3T106S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.15A UMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4081U3T106S

  • Description:TRANS NPN 50V 0.15A UMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):150 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:200 mW
  • Frequency - Transition:180MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:UMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4081U3T106S

2SC4081U3T106S

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC4081U3T106S is a general-purpose NPN silicon bipolar junction transistor designed for small signal amplification. It operates with a collector-emitter voltage of 50V and a continuous collector current of 150mA, housed in an SOT-323 (UMT3) surface-mount package. The device features a transition frequency of 180MHz and a maximum power dissipation of 200mW at 25°C ambient temperature. Electrical characteristics include a DC current gain ranging from 120 to 560 and a typical output capacitance of 2.0pF.

Single Bipolar Transistors Feature Summary

  • Low output capacitance of 2.0pF typifies high-frequency performance suitable for amplifier applications.
  • Designed as a complementary pair to the 2SA2029, 2SA1774EB, 2SA1774E3, 2SA1576UB, 2SA1576U3, and 2SA1037AK PNP transistors.

Single Bipolar Transistors Applications

  • General purpose small signal amplification
  • High-frequency circuit design

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm the exact packaging configuration and binning grade. Confirm RoHS compliance status and ensure the component meets the required storage temperature range of -55°C to +150°C for your specific application environment.

Single Bipolar Transistors Selection Notes

Select this component when a low-capacitance NPN transistor is required for general-purpose amplification within a 50V limit. Ensure the design accommodates the 200mW power dissipation constraint and verify that the hFE rank aligns with the circuit's gain requirements.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4081 series of general-purpose small signal amplifiers manufactured by ROHM Semiconductor. It shares electrical specifications with variants such as the 2SC4081UB and 2SC4081, differing primarily in the physical package type and taping code specified in the datasheet.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include the 2SC4081UBTLR and similar variants like the 2SCR522UBTL. Verify pinout compatibility and thermal characteristics before substitution.

Single Bipolar Transistors FAQ

What is the typical output capacitance of the 2SC4081U3T106S?

The typical output capacitance (Cob) is 2.0pF, measured under conditions of VCB = 12V, IE = 0A, and f = 1MHz.

Which PNP transistors are complementary to this NPN device?

It complements the 2SA2029, 2SA1774EB, 2SA1774E3, 2SA1576UB, 2SA1576U3, and 2SA1037AK.

What is the maximum collector-emitter breakdown voltage?

The collector-emitter breakdown voltage (BVCEO) is rated at 50V with a collector current of 1mA.

2SC4081U3T106S2SC4081U3T106S
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