Single Bipolar Transistors 2SC4132T100Q product image

2SC4132T100Q

$1.07
  • Description:TRANS NPN 120V 2A MPT3
  • Series:-

SKU:b9a2c81c4fb3 Category: Brand:

  
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2SC4132T100Q is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 120V 2A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4132T100Q

  • Description:TRANS NPN 120V 2A MPT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):120 V
  • Vce Saturation (Max) @ Ib, Ic:2V @ 100mA, 1A
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:80MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-243AA
  • Supplier Device Package:MPT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4132T100Q

2SC4132T100Q

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC4132T100Q is an NPN silicon power transistor housed in the MPT3 (SOT-89) surface-mount package. It features a collector-emitter breakdown voltage of 120V and a continuous collector current rating of 1.5A. The device exhibits a transition frequency of 80MHz and low output capacitance, typically 20pF at Vcb=10V. Maximum power dissipation is 0.5W at 25°C ambient temperature. DC current gain ranges from 82 to 390 under specified test conditions.

Single Bipolar Transistors Feature Summary

  • High breakdown voltage capability for robust operation in high-voltage circuits
  • Low collector output capacitance for improved switching performance
  • High transition frequency suitable for RF and high-speed applications

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • RF amplifier stages
  • Complementary pairing with 2SB1236 PNP transistors

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix T100 against official ROHM documentation to confirm reel quantity and packaging details. Ensure the component meets RoHS compliance requirements for your assembly process. Cross-reference the datasheet electrical characteristics with your circuit design limits before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when a 120V NPN transistor with moderate current handling is required. Consider its complementary relationship with the 2SB1236 for push-pull configurations. Evaluate the thermal constraints carefully as power dissipation is limited to 0.5W without significant heatsinking.

Single Bipolar Transistors Part Context

This part belongs to the ROHM power transistor family designed for general-purpose high-voltage applications. It serves as the NPN counterpart to the 2SD1857 and complements the 2SB1236 PNP device. The MPT3 package provides a compact solution for surface-mount designs requiring reliable high-voltage performance.

Single Bipolar Transistors Replacement Considerations

The 2SD1857 is listed as a complementary device rather than a direct substitute. Verify pinout compatibility and electrical parameters against the original design specifications before considering any alternative components.

2SC4132T100Q2SC4132T100Q
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