2SC4213BTE85LF

Single Bipolar Transistors Overview

The Toshiba 2SC4213BTE85LF is a silicon NPN epitaxial planar transistor designed for muting and switching applications. It features a collector-emitter voltage of 20 V, a collector current of 300 mA, and an emitter-base voltage of 25 V. The device offers a high DC current gain ranging from 200 to 1200 and a transition frequency of 30 MHz. It operates with a maximum junction temperature of 125 °C in the standard configuration and utilizes a small SC-70 surface-mount package.

Single Bipolar Transistors Feature Summary

• High emitter-base breakdown voltage capability
• High reverse DC current gain specification
• Low on-resistance performance
• Small footprint surface-mount packaging

Single Bipolar Transistors Applications

• Audio muting circuits
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm thermal derating conditions and reliability ratings. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure design parameters remain within absolute maximum ratings to maintain product reliability.

Single Bipolar Transistors Selection Notes

Select this component when high emitter-base voltage tolerance and low saturation voltage are required. The wide DC current gain range allows flexibility in base drive circuit design. Verify that the operating junction temperature does not exceed the specified limit for the chosen package variant.

Single Bipolar Transistors Part Context

This part belongs to the Toshiba 2SC4213 series of small-signal NPN transistors manufactured using the PCT process. The series is optimized for applications requiring robust emitter-base characteristics and efficient switching performance in compact electronic designs.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements must match the electrical ratings and package dimensions to ensure compatibility without redesigning the host circuit.

Single Bipolar Transistors FAQ

What is the typical reverse DC current gain?

The typical reverse hFE is 150 at VCE = -2 V and IC = -4 mA.

What is the maximum collector power dissipation?

The maximum collector power dissipation is 200 mW when mounted on a FR4 board, and 100 mW otherwise.

What is the transition frequency of the device?

The transition frequency (fT) is typically 30 MHz under standard test conditions.