2SC4215-O-TP

Single Bipolar Transistors Overview

The MCC 2SC4215-O-TP is an NPN silicon epitaxial transistor housed in a SOT-323 surface-mount package. It features a collector-emitter voltage of 30 V, a collector-base voltage of 40 V, and a maximum collector current of 20 mA with 100 mW power dissipation. The device offers a transition frequency ranging from 260 to 550 MHz and a DC current gain between 70 and 140 for the 'O' rank. Electrical characteristics include a reverse transfer capacitance of 0.55 pF and a low noise figure of 2 dB at 100 MHz.

Single Bipolar Transistors Feature Summary

• NPN silicon epitaxial construction designed for high-frequency applications
• Low reverse transfer capacitance and low noise figure for signal integrity
• RoHS compliant lead-free finish with UL 94 V-0 epoxy rating

Single Bipolar Transistors Applications

• High-frequency amplifier circuits
• RF signal processing stages
• General-purpose switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific suffix '-O' corresponds to the required hFE gain range (70-140) during procurement. Confirm the '-TP' designation indicates tape and reel packaging containing 3000 pieces per reel. Ensure sourcing from authorized distributors to guarantee genuine parts with full traceability and compliance with quality standards.

Single Bipolar Transistors Selection Notes

Select this component when a small SOT-323 footprint is required for NPN amplification. The 'O' rank provides a moderate gain range suitable for standard RF tasks. Consider the 260-550 MHz transition frequency for bandwidth requirements. Verify thermal limits against the 100 mW dissipation rating for the intended operating environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SC4215 series manufactured by Micro Commercial Components. The series includes variants distinguished by gain ranks ('R', 'O', 'Y') and packaging options. The 'O' variant specifically targets applications requiring a mid-range DC current gain while maintaining the high-frequency performance characteristics defined by the silicon epitaxial process.

Single Bipolar Transistors Replacement Considerations

Direct substitutes within the same family include the 2SC4215-R and 2SC4215-Y, which share identical electrical ratings but differ in hFE classification ranges.