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The 2SC4215-Y(TE85L,F) is a silicon NPN epitaxial planar transistor manufactured by Toshiba Semiconductor and Storage. Designed for high-speed switching applications, it features a maximum collector current of 20 mA and a collector-emitter voltage rating of 30 V. The device operates within a temperature range of -40°C to +125°C and is housed in an SC-70 (USM) surface-mount package. Key electrical characteristics include a transition frequency of 550 MHz and a power dissipation capacity of 100 mW.
Verify the specific suffix 'Y' against official Toshiba documentation to confirm binning or gain classification differences compared to standard variants. Ensure the TE85L tape-and-reel configuration matches assembly requirements. Confirm RoHS compliance status through the manufacturer's latest environmental declaration before finalizing procurement specifications.
Select this component when a compact NPN transistor with high-frequency performance is required. The 20 mA current limit and 30 V voltage rating define its operational boundaries. Consider the 100 mW power dissipation constraint for thermal management in dense PCB layouts. Verify that the 550 MHz transition frequency meets the target circuit speed requirements.
This part belongs to the 2SC4215 series of small-signal transistors. It shares the same core electrical specifications as the 2SC4215-O variant but may differ in manufacturing lot or specific parameter binning. Both are designed for automotive and industrial applications requiring reliable high-speed switching in miniature packages.
Publicly confirmed substitute part numbers for the 2SC4215-Y(TE85L,F) are not available in verified sources. Cross-reference with the 2SC4215-O(TE85L,F) only if official Toshiba documentation confirms functional equivalence for the specific application parameters.