Single Bipolar Transistors 2SC4301 product image

2SC4301

  • Description:TRANS NPN 800V 7A TO-3PF
  • Series:-

SKU:ab627a3d85ba Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC4301 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 800V 7A TO-3PF. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4301

  • Description:TRANS NPN 800V 7A TO-3PF
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):7:00 AM
  • Voltage - Collector Emitter Breakdown (Max):800 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 600mA, 3A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 3A, 4V
  • Power - Max:80 W
  • Frequency - Transition:6MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3 Full Pack
  • Supplier Device Package:TO-3PF
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4301

2SC4301

Single Bipolar Transistors Overview

The Sanken 2SC4301 is a silicon NPN triple diffused planar transistor designed for high voltage switching applications. It features a collector-emitter breakdown voltage of 800V and a continuous collector current rating of 7A, with a peak pulse current capability of 14A. The device operates within a junction temperature range of -55°C to +150°C and dissipates up to 80W at a case temperature of 25°C. Packaged in the FM100 (TO-3P) format, it exhibits a typical transition frequency of 6MHz and a minimum DC current gain of 10.

Single Bipolar Transistors Feature Summary

  • Triple diffused planar construction optimized for high voltage stability
  • High collector-emitter breakdown voltage rated at 800V
  • Robust thermal performance supporting 80W power dissipation under specified conditions

Single Bipolar Transistors Applications

  • Switching regulators
  • Lighting inverters
  • General purpose high voltage switching

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm package integrity and pin alignment against the FM100 specifications. Ensure compliance with RoHS standards as indicated in documentation. Review datasheet limitations regarding safe operating area constraints before integration into final designs.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high voltage isolation and moderate current handling capabilities. Evaluate thermal management requirements carefully, as power dissipation drops significantly without adequate heatsinking. Consider the transition frequency limits when designing for high-speed switching environments compared to lower voltage alternatives.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's lineup of high voltage silicon NPN devices. It utilizes triple diffused planar technology to enhance reliability under stress. The FM100 package provides mechanical robustness suitable for industrial and power supply applications where thermal conductivity and physical durability are critical design factors.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may not match the specific breakdown voltage or thermal characteristics required for high voltage switching roles.

2SC43012SC4301

Click on the inquiry