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2SC4412-5-TB-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is BIP NPN 50MA 300V. Review the specifications below when checking this part for your BOM.
The 2SC4412-5-TB-E is a single NPN bipolar junction transistor manufactured by onsemi. It is designed for switching and amplification applications requiring up to 50mA collector current. The device features a maximum collector-emitter voltage of 300V and a continuous collector current rating of 50mA. It operates with a power dissipation capacity of 200mW. The component utilizes silicon technology and is housed in an SMD/SMT package suitable for surface mount assembly.
Verify the specific datasheet version and electrical characteristics directly from onsemi official documentation before integration. Confirm that the 300V rating aligns with your circuit requirements. Ensure compatibility with the specified surface mount package dimensions for PCB layout. Check for any recent product change notifications regarding manufacturing updates or specifications.
Select this component when high voltage handling is required alongside moderate current levels. The 300V collector-emitter rating distinguishes it from lower voltage alternatives. Consider the 50mA current limit for load matching. The surface mount form factor aids in compact design. Verify thermal management needs given the 200mW power dissipation constraint in your specific application environment.
This part belongs to the family of single bipolar transistors offered by onsemi. It serves as a discrete semiconductor solution for general electronic applications. The NPN configuration is standard for many common circuit topologies. It represents a specific variant within the broader portfolio of onsemi's discrete transistor offerings, focusing on reliability and performance for industrial and consumer electronics.
Public confirmed substitute part numbers are not available in the provided source material.
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