2SC4466

Single Bipolar Transistors Overview

The Sanken Electric 2SC4466 is a silicon NPN triple diffused planar transistor designed for audio and general-purpose applications. It serves as the complementary device to the 2SA1693 PNP transistor. The component features an absolute maximum collector-base voltage of 120V, a collector-emitter voltage of 80V, and a continuous collector current rating of 6A. Power dissipation reaches 60W at a case temperature of 25°C. Electrical characteristics include a minimum DC current gain (hFE) of 50 and a typical transition frequency (fT) of 20MHz.

Single Bipolar Transistors Feature Summary

• Triple diffused planar construction ensures high reliability and durability against breakdown events.
• Designed specifically as a matched pair complement to the 2SA1693 PNP transistor for balanced performance.
• Wide safe operating area (ASO) supports robust operation under varying load conditions.

Single Bipolar Transistors Applications

• Audio amplifier output stages
• General-purpose switching circuits
• Complementary push-pull configurations

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank suffix (O, P, or Y) required for your design, as gain ranges vary significantly between grades. Confirm package compatibility with TO-3P (MT-100) mounting standards. Ensure thermal management solutions align with the 60W dissipation limit at 25°C case temperature. Cross-reference datasheet revision dates to confirm electrical characteristic updates.

Single Bipolar Transistors Selection Notes

Select this component when a high-current NPN transistor is needed to match the 2SA1693 in audio or power supply designs. Consider the 80V VCEO rating for low-voltage applications. Evaluate the thermal resistance characteristics if operating without an infinite heatsink. Verify that the required hFE bin matches the circuit's biasing requirements.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken Electric's lineup of silicon NPN power devices utilizing triple diffused planar technology. It is engineered for linear and switching applications requiring moderate voltage handling and substantial current capacity. The part is commonly paired with its PNP counterpart to create symmetrical amplifier stages.

Single Bipolar Transistors Replacement Considerations

Direct functional substitutes are not explicitly listed in the official documentation. Designers should evaluate other NPN transistors with similar VCEO, IC, and package constraints, ensuring hFE and fT specifications meet the original circuit requirements.

Single Bipolar Transistors FAQ

What is the complementary PNP transistor for the 2SC4466?

The 2SC4466 is designed as the complement to the 2SA1693 PNP transistor.

What are the available hFE gain ranks?

The datasheet specifies three hFE ranks: O (50 to 100), P (70 to 140), and Y (90 to 180).

What is the typical storage temperature range?

The storage temperature range is from -55°C to +150°C.