2SC4536-AZ

Description：RF TRANS NPN 15V SOT-89
Series：-

SKU:078e6ace6588 Category: Bipolar RF Transistors Brand: CEL

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Product introduction

Product Detailed Parameters

Description：RF TRANS NPN 15V SOT-89
Series：-
Mfr：CEL
Package：Strip
Transistor Type：NPN
Voltage - Collector Emitter Breakdown (Max)：15V
Frequency - Transition：-
Noise Figure (dB Typ @ f)：2dB @ 1GHz
Gain：7.2dB
Power - Max：2W
DC Current Gain (hFE) (Min) @ Ic, Vce：60 @ 50mA, 10V
Current - Collector (Ic) (Max)：250mA
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：SOT-89
Grade：-
Qualification：-

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2SC4536-AZ

Overview

The 2SC4536-AZ is an NPN epitaxial silicon RF transistor manufactured by Renesas Electronics. It is designed for ultra-high frequency band amplifier applications. The device features a maximum collector current of 0.25 A and a collector-emitter voltage rating of 15 V. It has a minimum DC current gain (hFE) of 40 and supports a maximum power dissipation of 2 W. The component operates within a temperature range up to 150 °C and is housed in a small outline surface-mount package with three terminals.

Feature Summary

NPN epitaxial silicon construction optimized for radio frequency signal processing
Designed specifically for ultra-high frequency band amplifier circuits
Low noise performance characteristics suitable for sensitive RF stages

Applications

Ultra-high frequency band amplification
RF signal processing circuits
Low noise amplifier stages

Procurement Notes

Verify the manufacturer designation as Renesas Electronics, which acquired NEC's semiconductor operations. Confirm the RoHS compliance status, as original NEC versions were non-compliant. Check for obsolescence notices indicating end-of-life status. Ensure the specific suffix matches the required package and material specifications for your design.

Selection Notes

Select this component for designs requiring an NPN RF transistor with low noise characteristics in the ultra-high frequency range. Verify that the 15 V collector-emitter voltage and 0.25 A current limits meet the circuit requirements. Consider the small outline package dimensions for PCB layout compatibility. Compare thermal dissipation capabilities against the expected operating conditions.

Part Context

This part belongs to the family of RF bipolar transistors originally developed by NEC and now produced by Renesas Electronics. It serves as a specialized discrete semiconductor component for high-frequency analog applications. The device is distinct from microcontrollers or digital logic ICs found in similar naming conventions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Cross-referencing requires consulting official Renesas replacement guides or equivalent RF transistor datasheets.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

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Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

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Mode of Transportation

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Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.