Single Bipolar Transistors 2SC4793,WNLF(J product image

2SC4793,WNLF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-

SKU:718abe7f156a Category: Brand:

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2SC4793,WNLF(J is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 230V 1A TO-220NIS. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC4793,WNLF(J

  • Description:TRANS NPN 230V 1A TO-220NIS
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):230 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 50mA, 500mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 100mA, 5V
  • Power - Max:2 W
  • Frequency - Transition:100MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220NIS
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC4793,WNLF(J

2SC4793,WNLF(J

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4793 is a silicon NPN epitaxial planar transistor designed for power amplifier applications. It features a high transition frequency of 100 MHz (typical) at an IC of 100 mA and VCE of 10 V. The device supports a maximum collector current of 1 A and withstands collector-emitter voltages up to 230 V. Power dissipation reaches 20 W at Tc = 25°C, with a junction temperature limit of 150°C. DC current gain ranges from 100 to 320 at IC = 100 mA.

Single Bipolar Transistors Feature Summary

  • High transition frequency suitable for driver stage amplifiers
  • Complementary pairing available with the 2SA1837 PNP transistor

Single Bipolar Transistors Applications

  • Power amplifier circuits
  • Driver stage amplification

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm lead-free plating status and packaging type. Confirm RoHS compliance directly with the manufacturer or authorized distributor before procurement. Ensure the component meets general electronics application standards and is not utilized in unintended high-reliability scenarios such as medical or aerospace equipment.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling up to 230 V combined with moderate power dissipation capabilities. Consider its complementary relationship with the 2SA1837 for push-pull configurations. Evaluate thermal management requirements carefully, as performance relies on maintaining the case temperature within specified limits during operation.

Single Bipolar Transistors Part Context

This component belongs to the Toshiba Silicon NPN Epitaxial Type series. It is specifically engineered for general electronics applications including computer, personal equipment, office equipment, measuring equipment, industrial robotics, and domestic appliances. It is not intended for use in atomic energy control instruments, transportation, or safety devices.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1837 as the complementary PNP transistor for this device. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the typical transition frequency of the 2SC4793?

The typical transition frequency (fT) is 100 MHz, measured under conditions of VCE = 10 V and IC = 100 mA.

Is the 2SC4793 compatible with the 2SA1837?

Yes, the 2SC4793 is documented as being complementary to the 2SA1837 PNP transistor.

What is the maximum collector-base voltage rating?

The absolute maximum rating for collector-base voltage (VCBO) is 230 V.

2SC4793,WNLF(J2SC4793,WNLF(J

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