2SC4944-GR(TE85L,F

Single Bipolar Transistors Overview

The Toshiba Semiconductor and Storage 2SC4944-GR(TE85L,F) is a dual NPN epitaxial planar transistor in an SOT-343 package. It features a collector-emitter voltage of 50 V, a collector current of 150 mA, and a DC current gain (hFE) ranging from 200 to 400. The transition frequency is 80 MHz, with a collector power dissipation of 200 mW.

Single Bipolar Transistors Feature Summary

• Dual configuration within a compact surface-mount package
• High DC current gain for efficient amplification
• Excellent hFE linearity across operating currents

Single Bipolar Transistors Applications

• Audio frequency general purpose amplifier circuits
• Small signal amplification stages
• Interface circuit applications

Single Bipolar Transistors Procurement Notes

Verify the specific GR binning requirement during procurement, as it dictates the minimum hFE threshold. Confirm that the TE85L suffix matches the required tape-and-reel packaging format for automated assembly processes.

Single Bipolar Transistors Selection Notes

Select this component when a dual NPN configuration is necessary to save board space. Ensure the design accommodates the 200 mW total power dissipation limit and verify compatibility with the 50 V maximum collector-emitter voltage rating.

Single Bipolar Transistors Part Context

This device belongs to Toshiba's small-signal transistor portfolio designed for audio and low-frequency applications. It serves as a complementary pair to the 2SA1873 PNP transistor, facilitating balanced push-pull circuit designs.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SA1873 as the complementary part. Verify pinout and electrical characteristics against other dual NPN transistors before substitution.