2SC5201,T6F(J

Single Bipolar Transistors Overview

The Toshiba 2SC5201 is a silicon NPN triple diffused mesa type transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage (VCEO) of 600 V and a maximum DC collector current (IC) of 50 mA. The device exhibits a low saturation voltage (VCE(sat)) of 1.0 V maximum at IC = 20 mA and IB = 0.5 mA. Electrical characteristics include a DC current gain (hFE) ranging from 100 to 300 at IC = 20 mA, and a collector output capacitance (Cob) of 6.5 pF typical at 1 MHz. The component operates within a junction temperature range up to 150 °C and utilizes a JEDEC TO-92MOD package.

Single Bipolar Transistors Feature Summary

• Triple diffused mesa structure engineered specifically for high-voltage switching operations
• High breakdown voltage capability with VCEO rated at 600 V
• Low collector-emitter saturation voltage to minimize power loss during conduction

Single Bipolar Transistors Applications

• General electronics applications including computers and office equipment
• Measuring equipment circuits
• Industrial robots control systems
• Home electronics appliances

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm environmental compliance status, such as RoHS compatibility. Confirm that the procurement channel provides valid datasheets matching the exact part number variant. Ensure the supplier adheres to Toshiba's restrictions on product use and does not supply components intended for unintended high-reliability applications without explicit permission.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling capabilities in a small-signal form factor. The 600 V rating makes it suitable for flyback transformers or snubber circuits in offline power supplies. Evaluate the thermal performance carefully, as the 900 mW power dissipation limit requires adequate heat sinking or PCB copper area management to maintain safe junction temperatures under continuous load conditions.

Single Bipolar Transistors Part Context

The 2SC5201 belongs to Toshiba's lineup of silicon NPN transistors utilizing triple diffused mesa technology. This manufacturing process enhances breakdown voltage stability and switching speed compared to standard planar types. It serves as a discrete solution for medium-power switching tasks where high voltage isolation is critical, distinct from integrated driver ICs or MOSFETs used in similar roles.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba cross-reference lists for verified substitutes. Generic replacements must match the 600 V VCEO rating, TO-92MOD package dimensions, and comparable hFE ranges to ensure circuit functionality without redesign.

Single Bipolar Transistors FAQ

What is the maximum collector-base voltage for the 2SC5201?

The absolute maximum rating for collector-base voltage (VCBO) is 600 V.

How does the DC current gain vary with collector current?

The DC current gain (hFE) is specified between 80 and 300. At IC = 1 mA, the minimum is 80, while at IC = 20 mA, the range is 100 to 300.

Is the 2SC5201 suitable for aerospace or medical equipment?

No. Toshiba explicitly restricts the product from use in equipment requiring extraordinarily high reliability, such as aerospace, medical devices, or nuclear facilities, unless specifically permitted.