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Product Detailed Parameters
- Description：RF TRANS NPN 10V 7GHZ 3-CP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：10V
- Frequency - Transition：7GHz
- Noise Figure (dB Typ @ f)：1dB @ 1GHz
- Gain：12dB
- Power - Max：200mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 20mA, 5V
- Current - Collector (Ic) (Max)：70mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-236-3, SC-59, SOT-23-3
- Supplier Device Package：3-CP
- Grade：-
- Qualification：-
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Overview
The onsemi 2SC5227A-4-TB-E is an NPN bipolar junction transistor designed for RF applications. It features a CP surface-mount package with dimensions of 2.9 x 1.5 x 1.1 mm. Key electrical parameters include a maximum DC collector current of 70 mA and a collector-emitter voltage (VCEO) of 10 V. The device supports a maximum operating frequency of 120 MHz, with a collector-base voltage of 20 V and an emitter-base voltage of 2 V. Maximum power dissipation is rated at 200 mW, and the component operates up to a junction temperature of +150 °C.
Feature Summary
- Designed for wide-band low-noise amplifier applications in the VHF to UHF spectrum.
- Utilizes a compact CP surface-mount package suitable for space-constrained PCB layouts.
- Constructed using silicon technology for high reliability in RF signal processing.
Applications
- VHF to UHF wide-band low-noise amplifiers
- RF signal processing circuits
- General-purpose NPN transistor switching
Procurement Notes
Verify the specific suffix -4-TB-E against the manufacturer's latest datasheet to confirm pinout and electrical tolerances. Ensure the CP package footprint matches the design layout. Check for any recent Product Change Notifications regarding material composition or manufacturing site changes. Confirm RoHS compliance status for the specific batch before integration into regulated assemblies.
Selection Notes
Select this component when a low-voltage NPN transistor is required for VHF/UHF frequencies. The 10 V VCEO rating limits suitability for higher voltage rails. Compare the 120 MHz transition frequency against system bandwidth requirements. Consider the 200 mW power dissipation limit for thermal management in dense packaging environments.
Part Context
This part belongs to the 2SC5227A series of RF bipolar transistors. It shares core characteristics with variants like the 2SC5227A-5-TB-E, differing primarily in packaging or tape-and-reel specifications. The series is engineered for low-noise performance in radio frequency front-end stages.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with similar NPN RF transistors by matching VCEO, ICmax, and package dimensions manually.
