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The 2SC5231C9-TL-E is a PNP bipolar junction transistor manufactured by onsemi. It features a maximum collector current of 3 A and a collector-emitter voltage rating of 12 V. The device has a minimum DC current gain (hFE) of 200. It is designed for surface mount applications with a maximum power dissipation of 0.9 W. The component operates at temperatures up to 150 °C and utilizes Tin/Bismuth terminal finishes.
Verify the manufacturer part number against official onsemi documentation to confirm the specific suffix and tape-and-reel packaging details. Ensure the procurement source provides valid traceability records and confirms compliance with RoHS directives as indicated in public databases.
Select this component when a PNP transistor with 3 A continuous current capacity and 12 V breakdown voltage is required. Consider the 0.9 W power dissipation limit and thermal management requirements for the chosen surface mount footprint during circuit design.
This component belongs to the family of small-signal and medium-power bipolar transistors produced by onsemi. It shares similar electrical characteristics with other devices in the CPH series, such as the CPH3121, which also offers 3 A current ratings and 12 V voltage capabilities in comparable packages.
Publicly confirmed substitute part numbers are not available in the provided reference data. Verify compatibility with direct replacements like the CPH3121 based on pinout and electrical parameter matching before implementation.