Single Bipolar Transistors 2SC5287 product image

2SC5287

$1.11
  • Description:TRANS NPN 550V 5A TO-3P
  • Series:-

SKU:8c2297553f54 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

2SC5287 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 550V 5A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5287

  • Description:TRANS NPN 550V 5A TO-3P
  • Series:-
  • Mfr:Sanken Electric USA Inc.
  • Package:Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):550 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 360mA, 1.8A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 1.8A, 4V
  • Power - Max:80 W
  • Frequency - Transition:6MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5287

2SC5287

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SC5287 is a silicon NPN triple diffused planar transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 550V and a continuous collector current rating of 5A, with a peak pulse current capability of 10A. The device supports a maximum power dissipation of 80W at 25°C case temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 10 to 25 and a typical transition frequency (fT) of 6MHz. It utilizes the MT-100 (TO-3P) package.

Single Bipolar Transistors Feature Summary

  • Triple diffused planar construction for enhanced reliability
  • High voltage handling capability suitable for switching regulators
  • Robust safe operating area performance

Single Bipolar Transistors Applications

  • Switching Regulators
  • General Purpose Switching Circuits

Single Bipolar Transistors Procurement Notes

Verify component authenticity through official Sanken channels or authorized distributors. Confirm the specific lot number against manufacturing records. Ensure the TO-3P package dimensions match the required PCB footprint. Check for compliance with RoHS standards if applicable to the target assembly. Validate that the supplier provides original manufacturer documentation.

Single Bipolar Transistors Selection Notes

Select this component for circuits requiring high voltage isolation and moderate current switching. Consider the thermal resistance characteristics when designing heat sinking solutions. Evaluate the saturation voltage requirements against the load conditions. Ensure the base drive circuit can supply the necessary current for optimal switching performance. Review the transient thermal resistance curves for pulsed operation scenarios.

Single Bipolar Transistors Part Context

This transistor belongs to Sanken's lineup of high-voltage silicon NPN transistors. It is engineered for robust performance in power conversion topologies. The triple diffused technology contributes to its stability under high stress conditions. It serves as a discrete solution for medium-power switching tasks where integrated drivers are not utilized.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly states 'Not Recommended for New Designs'. Engineers should evaluate newer alternatives from Sanken or other manufacturers that offer improved efficiency or lower on-resistance. Verify pin compatibility and thermal characteristics before substituting.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage?

The maximum collector-emitter breakdown voltage (V(BR)CEO) is 550V.

What package type does the 2SC5287 use?

It uses the MT-100 package, which corresponds to the TO-3P form factor.

Is this component recommended for new designs?

No, the datasheet explicitly marks it as 'Not Recommended for New Designs'.

2SC52872SC5287
$1.11
Buy Now