SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
2SC5287 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Sanken Electric USA Inc.. Its product description is TRANS NPN 550V 5A TO-3P. Review the specifications below when checking this part for your BOM.
The Sanken Electric USA Inc. 2SC5287 is a silicon NPN triple diffused planar transistor designed for high-voltage switching applications. It features a collector-emitter breakdown voltage of 550V and a continuous collector current rating of 5A, with a peak pulse current capability of 10A. The device supports a maximum power dissipation of 80W at 25°C case temperature. Key electrical characteristics include a minimum DC current gain (hFE) of 10 to 25 and a typical transition frequency (fT) of 6MHz. It utilizes the MT-100 (TO-3P) package.
Verify component authenticity through official Sanken channels or authorized distributors. Confirm the specific lot number against manufacturing records. Ensure the TO-3P package dimensions match the required PCB footprint. Check for compliance with RoHS standards if applicable to the target assembly. Validate that the supplier provides original manufacturer documentation.
Select this component for circuits requiring high voltage isolation and moderate current switching. Consider the thermal resistance characteristics when designing heat sinking solutions. Evaluate the saturation voltage requirements against the load conditions. Ensure the base drive circuit can supply the necessary current for optimal switching performance. Review the transient thermal resistance curves for pulsed operation scenarios.
This transistor belongs to Sanken's lineup of high-voltage silicon NPN transistors. It is engineered for robust performance in power conversion topologies. The triple diffused technology contributes to its stability under high stress conditions. It serves as a discrete solution for medium-power switching tasks where integrated drivers are not utilized.
The datasheet explicitly states 'Not Recommended for New Designs'. Engineers should evaluate newer alternatives from Sanken or other manufacturers that offer improved efficiency or lower on-resistance. Verify pin compatibility and thermal characteristics before substituting.
The maximum collector-emitter breakdown voltage (V(BR)CEO) is 550V.
It uses the MT-100 package, which corresponds to the TO-3P form factor.
No, the datasheet explicitly marks it as 'Not Recommended for New Designs'.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.