2SC5347AF-TD-E

Overview

The 2SC5347AF-TD-E is an NPN silicon RF bipolar transistor manufactured by onsemi, designed for VHF to UHF wideband amplifier applications. It operates at a maximum frequency of 4.7 GHz with a collector-emitter voltage (VCEO) of 12 V and an emitter-base voltage (VEBO) of 2 V. The device supports a continuous collector current of 150 mA and dissipates up to 1.3 W of power. It features a minimum DC current gain (hFE) of 60 at 10 mA and 5 V. Packaged in the PCP-3 surface-mount format, it functions as a single transistor configured for SMD/SMT installation and withstands operating temperatures up to +150°C.

Feature Summary

• Engineered for wideband amplification across VHF and UHF frequency ranges
• Utilizes silicon technology for high-frequency RF signal processing
• Designed for surface-mount integration within compact electronic assemblies

Applications

• VHF wideband amplifier circuits
• UHF wideband amplifier circuits
• High-frequency RF signal processing modules

Procurement Notes

Verify component authenticity through official manufacturer channels or authorized distributors. Confirm RoHS compliance status and check for specific environmental declarations prior to integration. Ensure the package type matches design requirements. Review the latest Product Discontinuance Notification and PCN documents for lifecycle updates. Validate electrical parameters against current datasheet specifications before finalizing procurement decisions.

Selection Notes

Select this component for designs requiring NPN RF performance up to 4.7 GHz. Verify that the 12 V collector-emitter rating and 150 mA current capacity align with circuit demands. Ensure the PCP-3 package fits the board layout constraints. Consider the 1.3 W power dissipation limit for thermal management strategies. Confirm compatibility with the intended operating temperature range of -55°C to +150°C.

Part Context

This part belongs to the 2SC5347A series of RF bipolar transistors from onsemi. It shares core electrical characteristics with the 2SC5347AE-TD-E variant but utilizes a distinct PCP-3 package instead of the TO-243-3 form factor found in other series members. Both variants target similar high-frequency amplification roles within the manufacturer's discrete semiconductor portfolio.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Evaluate alternative RF transistors based on matching frequency, voltage, and package specifications if direct replacement is required.