Single Bipolar Transistors 2SC5354-1(F) product image

2SC5354-1(F)

$2.42
  • Description:TRANS NPN 800V 5A TO-3P
  • Series:-

SKU:605bf13a4159 Category: Brand:

  
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2SC5354-1(F) is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANS NPN 800V 5A TO-3P. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5354-1(F)

  • Description:TRANS NPN 800V 5A TO-3P
  • Series:-
  • Mfr:Toshiba Semiconductor and Storage
  • Package:Tray
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):5:00 AM
  • Voltage - Collector Emitter Breakdown (Max):800 V
  • Vce Saturation (Max) @ Ib, Ic:1V @ 400mA, 2A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:10 @ 1mA, 5V
  • Power - Max:100 W
  • Frequency - Transition:-
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-3P-3, SC-65-3
  • Supplier Device Package:TO-3P(N)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5354-1(F)

2SC5354-1(F)

Single Bipolar Transistors Overview

The Toshiba 2SC5354-1(F) is an NPN bipolar junction transistor (BJT) designed for high-voltage switching applications. It features a collector-emitter voltage rating of 800V and a continuous collector current capacity of 5A. The component utilizes a through-hole package configuration suitable for robust circuit integration. Its electrical characteristics support reliable operation in power management systems requiring high breakdown voltage and moderate current handling capabilities.

Single Bipolar Transistors Feature Summary

  • High voltage blocking capability rated at 800V for safe operation in high-potential circuits
  • Robust current handling with a 5A continuous collector current rating
  • NPN polarity structure optimized for standard switching topologies

Single Bipolar Transistors Applications

  • High-voltage switching circuits
  • Power supply output stages
  • Industrial control interfaces

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation to ensure compatibility with required lead times and packaging formats. Confirm that the 800V rating aligns with system insulation requirements. Cross-reference the pinout against the official datasheet to prevent installation errors in high-voltage layouts. Ensure thermal management strategies account for the device's power dissipation limits under load conditions.

Single Bipolar Transistors Selection Notes

Select this component when circuit designs demand high voltage isolation combined with moderate current switching. Evaluate the thermal resistance parameters to determine appropriate heatsinking needs. Compare the gain characteristics against alternative transistors to ensure adequate drive requirements are met by the control logic without excessive base current consumption.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete semiconductor portfolio, specifically within the bipolar transistor category. It serves as a fundamental active component for power electronics. The manufacturer specializes in automotive and industrial grade semiconductors, ensuring reliability standards consistent with rigorous operational environments.

2SC5354-1(F)2SC5354-1(F)
$2.42
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