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2SC5354,TOJSQ(O is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Toshiba Semiconductor and Storage. Its product description is TRANSISTOR NPN TO-3PN. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for 2SC5354,TOJSQ(O
- Description：TRANSISTOR NPN TO-3PN
- Series：*
- Mfr：Toshiba Semiconductor and Storage
- Package：Tube
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for 2SC5354,TOJSQ(O
Single Bipolar Transistors Overview
The Toshiba 2SC5354 is a high-speed, high-voltage NPN silicon triple diffused planar transistor designed for switching regulator applications. It features an 800 V collector-emitter breakdown voltage and a maximum DC collector current of 5 A. The device exhibits excellent switching characteristics with a rise time of 0.7 μs and a fall time of 0.5 μs at IC = 2 A. It operates within a junction temperature range up to 150 °C and utilizes the JEDEC 2-16C1A package.
Single Bipolar Transistors Feature Summary
- Triple diffused planar structure optimized for high-speed switching performance
- High breakdown voltage capability suitable for demanding power supply environments
- Low saturation voltage characteristics to minimize conduction losses
Single Bipolar Transistors Applications
- Switching regulators
- High-speed DC-DC converters
Single Bipolar Transistors Procurement Notes
Verify RoHS compatibility status through official Toshiba sales representatives as markings indicate specific environmental compliance levels. Confirm the exact ordering suffix matches the required lead-free specifications. Review the TOSHIBA Semiconductor Reliability Handbook for derating concepts before finalizing procurement plans.
Single Bipolar Transistors Selection Notes
Select this component for circuits requiring high voltage isolation combined with rapid switching speeds. Ensure thermal management supports the 100 W dissipation rating at 25 °C case temperature. Evaluate the safe operating area curves against peak load conditions to prevent secondary breakdown during transient events.
Single Bipolar Transistors Part Context
This NPN transistor belongs to Toshiba's discrete semiconductor portfolio focused on power management solutions. It complements other high-voltage switching devices used in industrial power conversion systems. The triple diffused manufacturing process ensures robustness against high electrical stress compared to standard epitaxial structures.
Single Bipolar Transistors Replacement Considerations
Consult official Toshiba documentation for verified substitute part numbers. Do not assume pin-compatible alternatives without verifying absolute maximum ratings and switching times.
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