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Product Detailed Parameters
- Description：RF TRANS NPN 12V 6.7GHZ PCP
- Series：-
- Mfr：onsemi
- Package：Tape & Reel (TR),Tape & Reel (TR),Cut Tape (CT)
- Transistor Type：NPN
- Voltage - Collector Emitter Breakdown (Max)：12V
- Frequency - Transition：6.7GHz
- Noise Figure (dB Typ @ f)：1.1dB @ 1GHz
- Gain：9dB
- Power - Max：800mW
- DC Current Gain (hFE) (Min) @ Ic, Vce：90 @ 30mA, 5V
- Current - Collector (Ic) (Max)：100mA
- Operating Temperature：150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-243AA
- Supplier Device Package：PCP
- Grade：-
- Qualification：-
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Overview
The 2SC5415AE-TD-E is an NPN single RF transistor manufactured by onsemi, designed for high-frequency applications. It operates with a collector-emitter voltage of 12V and supports a maximum current of 100mA. The device features a typical transition frequency (fT) of 6.7GHz, enabling effective performance in ultra-high frequency bands. Key electrical characteristics include a typical forward transmission gain (|S21e|^2) of 9dB at 1GHz. Packaged in a PCP format, this component serves as a specialized semiconductor solution for demanding radio frequency circuit designs requiring high cut-off frequencies.
Feature Summary
- High gain capability with a typical |S21e|^2 of 9dB at 1GHz
- High cut-off frequency rated at 6.7GHz typical
Applications
- High-frequency low-noise amplifier circuits
- Ultra-high frequency band signal processing
- RF power amplification stages
Procurement Notes
Verify the specific manufacturer documentation to confirm RoHS compliance status and exact pinout configurations before integration. Ensure that the operating conditions remain within the specified 12V and 100mA limits to maintain reliability. Cross-reference the PCP package dimensions with your PCB footprint requirements to guarantee mechanical compatibility during assembly.
Selection Notes
Select this component when designing circuits that require an NPN transistor with a transition frequency exceeding 6GHz. It is suitable for applications needing moderate current handling at 100mA while maintaining high gain characteristics. Consider the PCP package constraints and thermal management needs associated with high-frequency operation when choosing this part over alternatives.
Part Context
This device belongs to onsemi's portfolio of RF transistors engineered for high-speed performance. It shares design similarities with other models in the series, such as the 2SC5227A-4-TB-E, which also targets high-frequency amplification. These components are typically utilized in communication systems where signal integrity and frequency response are critical parameters for system functionality.
Replacement Considerations
Potential substitutes include the 2SC5227A-4-TB-E and 2SC5226A from the same manufacturer. Verify that alternative parts match the required fT and voltage specifications before implementation.
FAQ
What is the typical transition frequency of the 2SC5415AE-TD-E?
The typical transition frequency (fT) is 6.7GHz.
What is the maximum collector current rating?
The maximum collector current is 100mA.
What is the typical gain at 1GHz?
The typical forward transmission gain (|S21e|^2) is 9dB at 1GHz.
