2SC5439(F)

Single Bipolar Transistors Overview

The Toshiba 2SC5439 is an NPN triple-diffused silicon transistor designed for switching regulator, high-voltage switching, DC-DC converter, and inverter lighting applications. It features a collector-emitter breakdown voltage of 450 V and a collector-base breakdown voltage of 1000 V. The device supports a continuous collector current of 8 A and a pulse collector current of 16 A. Typical switching times include a turn-on time of 0.2 μs and a fall time of 0.15 μs. It operates within a junction temperature range of -55 to 150 °C.

Single Bipolar Transistors Feature Summary

• Triple-diffused NPN silicon construction optimized for fast switching performance
• High collector-base breakdown voltage capability up to 1000 V
• Low saturation voltage characteristics for efficient power handling

Single Bipolar Transistors Applications

• Switching regulator circuits
• High-voltage switching applications
• DC-DC converter designs
• Inverter lighting systems

Single Bipolar Transistors Procurement Notes

Verify RoHS compatibility status with the manufacturer or authorized distributor, as indicated by lot number markings on the component. Confirm that the specific ordering suffix matches the required environmental compliance standards. Review the latest Toshiba Semiconductor Reliability Handbook for derating concepts and methods before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high collector-emitter voltage ratings and rapid switching speeds. Ensure the design accounts for the absolute maximum ratings, particularly the 450 V collector-emitter voltage and 8 A continuous collector current. Consider thermal management requirements given the 2.0 W dissipation rating at 25°C ambient temperature.

Single Bipolar Transistors Part Context

This part belongs to the family of NPN triple-diffused silicon transistors manufactured by Toshiba. It is engineered specifically for general electronics applications involving power conversion and control. The device utilizes a JEDEC SC-67 package format, providing a standardized footprint for integration into various electronic circuit boards.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical parameter overlaps with potential alternatives before implementation.

Single Bipolar Transistors FAQ

What is the typical turn-on time for the 2SC5439?

The typical turn-on time (ton) is 0.2 μs.

What is the maximum collector-base breakdown voltage?

The maximum collector-base breakdown voltage (V(BR)CBO) is 1000 V.

Is this transistor suitable for use in nuclear facilities?

No, the product is not intended for unintended uses such as equipment used in nuclear facilities.