2SC5549,T6F(J

Single Bipolar Transistors Overview

The Toshiba 2SC5549 is an NPN triple-diffused silicon transistor designed for high-speed switching applications in inverter lighting systems. It features a collector-emitter voltage of 400 V and a continuous collector current rating of 1 A. The device guarantees a minimum DC current gain (hFE) of 13 at IC = 1 mA, making it suitable for Resonant Colpitts Converter (RCC) circuits. Switching performance includes a maximum rise time of 0.5 μs and fall time of 0.3 μs at IC = 0.24 A. It is housed in a JEDEC TO-92MOD package with a junction temperature rating up to 150 °C.

Single Bipolar Transistors Feature Summary

• Optimized for high-speed switching operations within inverter lighting systems
• Guarantees low DC current gain for reliable operation in RCC circuits
• Features high breakdown voltage capability for robust circuit protection

Single Bipolar Transistors Applications

• Resonant Colpitts Converter (RCC) circuits
• Inverter lighting system switching
• General-purpose high-speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official Toshiba documentation to confirm lead-free status and packaging configuration. Confirm RoHS compliance details directly with the manufacturer or authorized distributors prior to procurement. Ensure design parameters remain within absolute maximum ratings to maintain reliability standards defined in the Toshiba Semiconductor Reliability Handbook.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-voltage handling and fast switching speeds. The guaranteed minimum hFE at low currents makes it distinct for oscillator-based topologies like RCC. Evaluate thermal management requirements carefully, as power dissipation is limited to 0.9 W. Consider the TO-92MOD package constraints for PCB layout and heat sinking strategies during the initial design phase.

Single Bipolar Transistors Part Context

This part belongs to Toshiba's discrete semiconductor lineup focused on general electronics and consumer appliances. It utilizes triple-diffused technology to achieve superior switching characteristics compared to standard planar transistors. The component supports various domestic and office equipment applications where compact size and high voltage tolerance are required.

Single Bipolar Transistors Replacement Considerations

Consult official Toshiba substitution guides for verified equivalents. Cross-referencing requires matching voltage ratings, current capabilities, and switching times. Generic replacements may not guarantee the specific hFE characteristics required for RCC circuit stability.