2SC5551AF-TD-E

Overview

The 2SC5551AF-TD-E is an NPN single RF transistor manufactured by onsemi in a PCP (SOT-89) package. It operates with a collector-to-emitter voltage of 30 V and supports a continuous collector current of 300 mA, with a pulse rating of 600 mA. The device features a typical gain-bandwidth product (fT) of 3.5 GHz at 50 mA collector current. Maximum allowable collector dissipation reaches 1.3 W when mounted on a ceramic substrate. DC current gain ranges from 135 to 270 for the 'F' rank classification.

Feature Summary

• High-frequency operation capability with a typical transition frequency of 3.5 GHz
• Robust power handling with a maximum collector dissipation of 1.3 W under specific mounting conditions
• Suitable for medium-output amplifier applications requiring large signal current drive

Applications

• High-frequency medium-output amplifiers
• RF signal processing circuits
• Medium-current ultrahigh-speed switching applications

Procurement Notes

Verify the ordering suffix matches the required hFE binning; the 'F' suffix indicates a specific DC current gain range of 135 to 270. Confirm the package type is PCP (SOT-89) and that the tape and reel quantity is 1,000 pieces per reel. Ensure the component is lead-free as specified in the datasheet.

Selection Notes

Select this component for designs requiring high transition frequencies around 3.5 GHz and moderate output currents up to 300 mA. Consider the thermal management requirements carefully, as the 1.3 W dissipation rating depends on mounting to a ceramic substrate. Verify that the 30 V collector-to-emitter voltage aligns with the circuit's supply rails.

Part Context

This part belongs to the 2SC5551A family of NPN epitaxial planar silicon transistors designed for RF applications. The 'AF' designation specifically denotes the SOT-89/PCP package variant with the 'F' hFE gain ranking. It serves as a high-performance discrete solution for amplification stages where size and frequency response are critical constraints.

Replacement Considerations

Direct substitutes include other 2SC5551A variants from different manufacturers or alternative packages within the same series, such as the 2SC5551AE-TD-E, provided the hFE binning requirements are met.