Single Bipolar Transistors 2SC5585E3TL product image

2SC5585E3TL

$0.36
  • Description:TRANS NPN 12V 0.5A EMT3
  • Series:-

SKU:f4568ac79c1f Category: Brand:

  
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2SC5585E3TL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 12V 0.5A EMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SC5585E3TL

  • Description:TRANS NPN 12V 0.5A EMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):500 mA
  • Voltage - Collector Emitter Breakdown (Max):12 V
  • Vce Saturation (Max) @ Ib, Ic:250mV @ 10mA, 200mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:270 @ 10mA, 2V
  • Power - Max:150 mW
  • Frequency - Transition:320MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-75, SOT-416
  • Supplier Device Package:EMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SC5585E3TL

2SC5585E3TL

Single Bipolar Transistors Overview

The 2SC5585E3TL is an NPN silicon bipolar junction transistor manufactured by ROHM Semiconductor. It features a SOT-416 (EMT3) surface-mount package with dimensions of 1.6x1.6 mm and a thickness of 0.9 mm. The device supports a collector-emitter voltage (VCEO) of 12 V, a collector-base voltage (VCBO) of 15 V, and an emitter-base voltage (VEBO) of 6 V. It handles a continuous collector current of 500 mA and a peak pulse current of 1.0 A. Key electrical parameters include a DC current gain (hFE) ranging from 270 to 680 at IC=10 mA, a transition frequency (fT) of 320 MHz, and a collector-emitter saturation voltage (VCE(sat)) of 250 mV maximum at IC=200 mA and IB=10 mA. Power dissipation is rated at 150 mW, with a maximum junction temperature of +150°C.

Single Bipolar Transistors Feature Summary

  • High current capability supporting up to 500 mA continuous operation
  • Low collector-emitter saturation voltage for efficient switching performance
  • Compact SOT-416 surface-mount package design

Single Bipolar Transistors Applications

  • Low frequency amplifier circuits
  • Driver applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm packaging details and RoHS compliance status. Confirm that the component meets the required ambient operating conditions and power derating requirements before finalizing procurement specifications.

Single Bipolar Transistors Selection Notes

Select this component for low-frequency amplification or driver tasks requiring high current handling within a small footprint. Ensure the circuit design accommodates the 12 V collector-emitter breakdown limit and the 150 mW power dissipation constraint under expected thermal conditions.

Single Bipolar Transistors Part Context

This part belongs to the 2SC5585 series of low-frequency transistors produced by ROHM Semiconductor. It is designed for general-purpose electronic equipment such as audio-visual devices, office automation equipment, and home appliances. The product is not recommended for use in automotive equipment or medical devices requiring extremely high reliability.

Single Bipolar Transistors Replacement Considerations

The datasheet lists the 2SC5663 as a related model sharing similar electrical characteristics but utilizing a different SOT-723 (VMT3) package. Verify pinout compatibility and physical dimensions when considering substitution.

2SC5585E3TL2SC5585E3TL
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