2SC581300L

Single Bipolar Transistors Overview

The Panasonic 2SC5813 is a silicon NPN epitaxial planar transistor designed for DC-DC converter applications. It features a Mini3-G1 (EIAJ SC-59) package with automatic insertion tape packing. Key electrical parameters include a collector-emitter voltage of 80 V, a continuous collector current of 1.5 A, and a peak collector current of 3 A. The device offers a low collector-emitter saturation voltage of 350 mV at IC = 1 A and IB = 20 mA. Transition frequency is rated at 180 MHz, with a forward current transfer ratio of 200 at IC = 100 mA.

Single Bipolar Transistors Feature Summary

• Low collector-emitter saturation voltage for efficient switching performance
• Miniature package design enabling equipment downsizing and automated assembly
• High reliability under harsh conditions with anti-sulfurated electrode material

Single Bipolar Transistors Applications

• DC-DC converters
• Automotive BMS systems
• Solar panel battery management

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status on the manufacturer's official website before procurement, as this component may be classified under maintenance or discontinued stages. Confirm that the RoHS Directive compliance meets your regional regulatory requirements. Ensure the ordering suffix matches the required packaging format, such as tape packing for automatic insertion, to avoid handling discrepancies during manufacturing.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring high-speed switching with minimal voltage drop in compact form factors. The 80 V rating suits medium-voltage DC-DC topologies. Evaluate thermal dissipation capabilities against the 600 mW power limit at 25°C ambient temperature. Consider the transition frequency for high-frequency operation needs within the specified operating range.

Single Bipolar Transistors Part Context

This transistor belongs to Panasonic's lineup of discrete semiconductor devices optimized for power management. It utilizes an epitaxial planar structure to ensure stable performance across varying temperatures. The Mini3-G1 package facilitates surface-mount technology integration, supporting modern electronics manufacturing trends toward miniaturization and automated production lines.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official replacement list for verified substitutes. Cross-reference pin configurations and absolute maximum ratings to ensure compatibility. Verify that alternative components meet the same automotive or industrial qualification standards if used in critical applications.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter voltage rating?

The maximum collector-emitter voltage (VCEO) is 80 V.

Does this component support automated assembly?

Yes, it is available in tape packing compatible with automatic insertion equipment.

What is the typical forward current transfer ratio?

The typical hFE is 200 when measured at IC = 100 mA and VCE = 2 V.