2SC5866TLQ

Single Bipolar Transistors Overview

The ROHM 2SC5866TLQ is an NPN silicon medium power bipolar junction transistor (BJT) designed for high-speed switching and low-frequency amplifier applications. It features a collector-emitter voltage of 60V, a continuous collector current of 2A, and a power dissipation of 0.5W in the TSMT3 surface-mount package. Key electrical characteristics include a typical saturation voltage of 200mV at 1.0A collector current and 100mA base current, and a transition frequency of 200MHz.

Single Bipolar Transistors Feature Summary

• High-speed switching capability with a typical fall time of 35ns at 2A collector current.
• Low saturation voltage, typically 200mV under standard drive conditions.
• Strong discharge power handling for inductive and capacitive loads.

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix to ensure the correct packaging format matches your assembly requirements. Confirm that the component meets all necessary RoHS compliance standards for your target market. Cross-reference the datasheet revision date to ensure you are using the most current electrical specifications and absolute maximum ratings during design validation.

Single Bipolar Transistors Selection Notes

Select this component when a compact NPN transistor with 60V rating and 2A capacity is required for high-speed switching. The TSMT3 package offers a small footprint suitable for space-constrained designs. Ensure the thermal management strategy supports the 0.5W power dissipation limit on the reference land area specified in the datasheet.

Single Bipolar Transistors Part Context

This device belongs to ROHM's medium power transistor lineup, optimized for general-purpose switching and amplification. It serves as a complementary counterpart to the 2SA2094 PNP transistor, allowing for push-pull or complementary circuit configurations in driver stages and signal processing applications.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SC5866 as complementing the 2SA2094. No other direct substitute part numbers are listed in the provided documentation. Verify pinout compatibility and electrical parameters before considering alternative manufacturers' components.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SC5866?

The typical fall time is 35ns when tested at a collector current of 2A.

What is the DC current gain range for this transistor?

The DC current gain (hFE) ranges from 120 to 390, measured at VCE=2V and IC=100mA.

Is the 2SC5866 suitable for driving inductive loads?

Yes, the datasheet highlights strong discharge power capabilities specifically for inductive and capacitive loads.