2SC5866TLR

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SC5866TLR is a medium power NPN silicon bipolar junction transistor housed in the TSMT3 (SOT-346T) surface-mount package. It features a collector-emitter voltage of 60V and a continuous collector current of 2A, with a peak pulse current rating of 4A. The device offers a typical saturation voltage of 200mV at 1.0A and a transition frequency of 200MHz. Designed for high-speed switching applications, it exhibits a typical fall time of 35ns and provides strong discharge power capabilities for inductive and capacitive loads.

Single Bipolar Transistors Feature Summary

• High-speed switching performance with a typical fall time of 35ns
• Low saturation voltage typically rated at 200mV under standard drive conditions
• Robust discharge power handling for both inductive and capacitive loads

Single Bipolar Transistors Applications

• Low frequency amplifier circuits
• High speed switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the official datasheet to confirm packaging details such as tape width and reel size. Ensure the component meets RoHS compliance requirements for your assembly process. Confirm that the thermal dissipation characteristics align with your board layout, as power ratings depend on reference land mounting. Cross-reference the hFE rank classification required by your circuit design before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-346T footprint is required for medium power switching tasks. The 60V rating suits low-voltage DC-DC converters and motor driver stages. Consider the complementary 2SA2094 PNP transistor if a push-pull configuration is needed. Evaluate the 0.5W power dissipation limit relative to your thermal management strategy and ambient operating temperature constraints.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor series designed for general-purpose amplification and switching. It utilizes silicon planar technology for improved reliability compared to older diffusion methods. The TSMT3 package allows for automated surface-mount assembly, supporting high-volume manufacturing efficiency while maintaining robust electrical performance for consumer and industrial electronics.

Single Bipolar Transistors Replacement Considerations

The 2SA2094 is documented as the complementary PNP type within the same product family. Verify pinout compatibility and electrical parameters when substituting with other NPN transistors from different manufacturers. Ensure any replacement maintains the 60V breakdown voltage and 2A current capacity requirements of the original design.

Single Bipolar Transistors FAQ

What is the typical fall time for the 2SC5866?

The typical fall time is 35ns when tested at a collector current of 2A.

Which PNP transistor complements the 2SC5866?

The 2SA2094 is the designated complementary PNP transistor for this component.

What is the maximum collector current rating?

The continuous collector current is rated at 2A, with a peak pulse current capability of 4A.