2SC6082

Single Bipolar Transistors Overview

The onsemi 2SC6082 is a single NPN epitaxial planar silicon bipolar junction transistor designed for high-current switching applications. It features a maximum collector current of 15 A and a collector-emitter voltage rating of 50 V, with a collector-base voltage of 60 V and an emitter-base voltage of 6 V. The device exhibits a low collector-emitter saturation voltage of 200 mV at specified conditions and offers a DC current gain (hFE) ranging from 200 to 560. It operates within a junction temperature range up to +150°C and utilizes a TO-220FP-3 through-hole package.

Single Bipolar Transistors Feature Summary

• High current handling capability suitable for power switching circuits
• Low saturation voltage for improved efficiency in conduction states
• High DC current gain ensuring effective base drive requirements

Single Bipolar Transistors Applications

• General purpose power switching
• Audio amplifier output stages
• Motor control circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation when ordering, as the 2SC6082-1E variant indicates a tube package configuration. Confirm RoHS compliance status and REACH SVHC declarations against current regulatory requirements. Ensure the procurement source provides official datasheets matching the exact part number to validate electrical parameters and thermal characteristics before integration into designs.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring robust NPN switching with moderate voltage ratings. The TO-220FP-3 package facilitates heat dissipation for continuous currents up to 15 A. Consider the hFE spread of 200 to 560 when designing base drive circuits to ensure consistent performance across different units. Verify thermal management strategies align with the device's power dissipation limits under expected operating conditions.

Single Bipolar Transistors Part Context

The 2SC6082 belongs to onsemi's lineup of general-purpose bipolar transistors. It serves as a discrete semiconductor solution for medium-power applications. The device is manufactured using silicon epitaxial planar technology, providing reliability for industrial and consumer electronics. Its specifications position it between low-power signal transistors and high-voltage power devices.

Single Bipolar Transistors Replacement Considerations

Cross-reference with other NPN transistors offering similar 15 A current and 50 V voltage ratings in TO-220 packages. Verify pinout compatibility and thermal resistance values to ensure direct substitution without circuit redesign.