2SCR514P5T100

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SCR514P5T100 is a single NPN silicon bipolar junction transistor (BJT) housed in an SMD/SMT MPT3 (SOT-89-3) package. It features a maximum collector-emitter voltage (VCEO) of 80 V and a maximum collector-base voltage (VCBO) of 80 V, with an emitter-base voltage (VEBO) rating of 6 V. The device supports a maximum DC collector current of 700 mA and dissipates up to 2 W of power. Key electrical parameters include a collector-emitter saturation voltage of 300 mV, a transition frequency (fT) of 320 MHz, and a DC current gain (hFE) ranging from 120 to 390 at 100 mA and 3 V. It operates at temperatures up to +150°C.

Single Bipolar Transistors Feature Summary

• Single NPN configuration designed for surface-mount applications
• High-speed switching capability with a 320 MHz transition frequency
• Robust thermal performance supporting operation up to +150°C

Single Bipolar Transistors Applications

• General-purpose driver circuits
• Low-frequency amplification stages
• Switching applications requiring moderate current handling

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with RoHS and REACH standards if required by your design. Confirm that the MPT3 footprint matches your PCB layout constraints before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when an NPN BJT with 80V breakdown and 700mA continuous current capacity is needed in a compact SOT-89 form factor. Consider the 320MHz fT for high-speed requirements and verify that the 2W power dissipation rating suits your thermal management strategy within the limited surface area of the MPT3 package.

Single Bipolar Transistors Part Context

This part belongs to the 2SxR series of bipolar transistors manufactured by ROHM Semiconductor. It is specifically engineered as a middle-power transistor suitable for general electronic equipment. The device utilizes silicon technology and is optimized for low saturation voltage characteristics to improve efficiency in switching and amplification roles.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify pinout compatibility and electrical ratings with any potential alternative components before implementation.