Single Bipolar Transistors 2SCR523EBTL product image

2SCR523EBTL

$0.27
  • Description:TRANS NPN 50V 0.1A EMT3F
  • Series:-

SKU:e846bcafad3e Category: Brand:

  
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2SCR523EBTL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 50V 0.1A EMT3F. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SCR523EBTL

  • Description:TRANS NPN 50V 0.1A EMT3F
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):100 mA
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 6V
  • Power - Max:150 mW
  • Frequency - Transition:350MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:SC-89, SOT-490
  • Supplier Device Package:EMT3F (SOT-416FL)
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SCR523EBTL

2SCR523EBTL

Single Bipolar Transistors Overview

The 2SCR523EBTL is a general-purpose NPN silicon epitaxial planar transistor manufactured by ROHM Semiconductor. It features a collector-emitter voltage (VCEO) of 50 V and a maximum collector current (IC) of 100 mA. The device operates with a DC current gain (hFE) ranging from 120 to 560 at -1 mA and -6 V. Key electrical parameters include a collector-base voltage (VCBO) of 50 V, an emitter-base voltage (VEBO) of 5 V, and a transition frequency (fT) of 350 MHz. Power dissipation is rated at 200 mW, with a saturation voltage of 300 mV at 5 mA base current and 50 mA collector current. The component supports a maximum operating temperature of +150°C and is housed in the SOT-416FL (EMT3F) surface-mount package.

Single Bipolar Transistors Feature Summary

  • General-purpose amplification utilizing NPN silicon epitaxial planar technology for signal processing applications.
  • High-frequency performance capability supported by a 350 MHz transition frequency specification.
  • Integrated bias resistor design within the EMT3F package to simplify circuit layout and reduce component count.

Single Bipolar Transistors Applications

  • General-purpose signal amplification circuits
  • Switching applications requiring low power dissipation
  • Audio pre-amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix EBTL against official ROHM documentation to confirm package type and tape-and-reel specifications. Ensure compatibility with SOT-416FL footprint requirements during PCB design. Confirm RoHS compliance status through the manufacturer's latest datasheet before integration into regulated assemblies.

Single Bipolar Transistors Selection Notes

Select this component for designs requiring a compact NPN transistor with moderate voltage ratings and high current gain. The integrated bias resistors reduce external component count compared to discrete transistors. Verify that the 200 mW power dissipation limit accommodates the thermal constraints of the target application environment.

Single Bipolar Transistors Part Context

This part belongs to the 2SCR523 series of general-purpose NPN transistors designed for surface-mount applications. The series emphasizes miniaturization and reliability, targeting consumer electronics and industrial control systems where space efficiency is critical. The EBTL variant specifically denotes the EMT3F package configuration optimized for automated assembly processes.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with ROHM's official replacement guide or consult distributor databases for equivalent SOT-416FL NPN transistors with matching VCEO, IC, and hFE specifications.

2SCR523EBTL2SCR523EBTL
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