2SCR583D3FRATL

Single Bipolar Transistors Overview

The 2SCR583D3FRATL is an NPN silicon epitaxial planar power transistor manufactured by ROHM Semiconductor, designed for automotive applications. It features a collector-emitter voltage of 120V and a continuous collector current of 3A. The device is housed in a TO-252 (DPAK) surface-mount package, specifically the TL variant, which corresponds to the JEITA SC-63 standard. It complies with the AEC-Q101 automotive reliability qualification standard. The component exhibits a DC current gain (hFE) range of 120 to 390 at specified test conditions. Its maximum operating junction temperature reaches 150°C, ensuring robust performance in high-temperature environments typical of automotive electronics.

Single Bipolar Transistors Feature Summary

• Automotive-grade reliability compliant with AEC-Q101 standards
• Low saturation voltage characteristics suitable for low-frequency amplification
• Surface-mount construction in a compact TO-252 (DPAK) package

Single Bipolar Transistors Applications

• Power supply driver circuits
• Low-frequency amplifier stages
• Automotive electronic control units

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'TL' against the target PCB footprint dimensions, as package tolerances may vary slightly between manufacturing lots or revisions. Confirm that the design supports the required thermal dissipation capabilities inherent to the TO-252 form factor. Ensure compatibility with the specified AEC-Q101 quality level if the application mandates strict automotive grade certification. Cross-reference the hFE binning requirements with the circuit's base drive capability to ensure proper saturation during operation.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring moderate power handling within a constrained surface-mount area. The 120V rating provides sufficient headroom for many automotive 12V systems. Consider the complementary PNP type for push-pull configurations. Evaluate the thermal resistance of the PCB layout to maintain junction temperatures within the 150°C limit under full load conditions. This transistor is appropriate for applications prioritizing automotive durability over ultra-high frequency performance.

Single Bipolar Transistors Part Context

This part belongs to ROHM's lineup of automotive bipolar junction transistors engineered for high reliability. It serves as a discrete solution for switching and amplification tasks where silicon technology offers a cost-effective alternative to wider bandgap devices. The TO-252 package allows for efficient heat transfer to the board copper planes. It is distinct from higher-voltage or higher-current variants in the same family by its specific 120V/3A rating profile.

Single Bipolar Transistors Replacement Considerations

Direct substitutes include other automotive-grade NPN transistors in the TO-252 package with matching 120V VCEO and 3A IC ratings. Verify pinout compatibility and thermal characteristics before substitution. Check for equivalent AEC-Q101 qualification status to maintain system reliability standards.