2SD0814ARL

$0.06

Description：TRANS NPN 185V 0.05A MINI3-G1
Series：-

SKU:ed6b49064c5b Category: Single Bipolar Transistors Brand: Panasonic Electronic Components

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Product introduction

2SD0814ARL is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Panasonic Electronic Components. Its product description is TRANS NPN 185V 0.05A MINI3-G1. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD0814ARL

Description：TRANS NPN 185V 0.05A MINI3-G1
Series：-
Mfr：Panasonic Electronic Components
Package：Tape & Reel (TR)
Transistor Type：NPN
Current - Collector (Ic) (Max)：50 mA
Voltage - Collector Emitter Breakdown (Max)：185 V
Vce Saturation (Max) @ Ib, Ic：1V @ 3mA, 30mA
Current - Collector Cutoff (Max)：1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：130 @ 10mA, 5V
Power - Max：200 mW
Frequency - Transition：150MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：Mini3-G1
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD0814ARL

2SD0814ARL

Single Bipolar Transistors Overview

The Panasonic 2SD0814ARL is a silicon NPN epitaxial planar transistor designed for high breakdown voltage low-frequency and low-noise amplification. It features a collector-emitter voltage (VCEO) of 185 V, a collector current (IC) rating of 50 mA, and a collector power dissipation (PC) of 200 mW at 25°C ambient temperature. The device operates within a junction temperature range of -55°C to +150°C and utilizes the Mini3-G1 package.

Single Bipolar Transistors Feature Summary

High collector-emitter voltage capability
Low noise voltage characteristics
Mini type package enabling equipment downsizing

Single Bipolar Transistors Applications

High breakdown voltage low-frequency amplification
Low-noise amplification circuits

Single Bipolar Transistors Procurement Notes

Verify the exact ordering suffix against the manufacturer's official documentation to confirm specific binning or packaging variations. Confirm compliance with RoHS directives and check the latest product lifecycle status on the manufacturer's website before procurement.

Single Bipolar Transistors Selection Notes

Select this component for applications requiring high collector-emitter voltage ratings combined with low noise performance in low-frequency environments. Ensure the design accommodates the specified 200 mW power dissipation limit and the thermal constraints of the Mini3-G1 package.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic 2SD0814A series of silicon NPN transistors. It is specifically engineered for use in circuits demanding high voltage tolerance and minimal signal noise, utilizing an epitaxial planar structure for reliable operation.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official cross-reference data for verified substitute part numbers. Do not assume compatibility based solely on similar electrical parameters without verifying pinout and package dimensions.