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2SD1062R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 12A TO-220-3. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1062R is a silicon NPN power bipolar junction transistor (BJT) designed for high-current switching applications. It features a maximum collector current of 12A and a collector-emitter breakdown voltage of 50V. The device utilizes a TO-220AB flange mount package, enabling efficient thermal dissipation with a maximum power rating of 40W. It operates within a temperature range up to +150°C junction temperature.
Verify the specific suffix against official datasheets to confirm pinout and electrical tolerances. Confirm RoHS compliance status through manufacturer documentation. Ensure the TO-220AB flange variant matches the thermal design requirements. Check for obsolescence notices or lifecycle changes before finalizing procurement plans.
Select this component when high continuous collector current near 12A is required alongside moderate voltage ratings. The TO-220AB package necessitates adequate heatsinking infrastructure due to the 40W power dissipation capacity. Compare gain bandwidth and saturation voltage specifications against alternative transistors if frequency response is critical to the application design.
This part belongs to the 2SD series of power transistors manufactured by onsemi. It serves as a discrete semiconductor solution for power electronics. The device is categorized under bipolar junction transistors intended for general-purpose power switching and amplification tasks in industrial and consumer equipment.
The 2SD1062R-RC is a documented equivalent variant from Sanyo/Semiconductor Components Industries. Verify pin compatibility and thermal resistance values before substitution.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.