2SD1263AQ

Single Bipolar Transistors Overview

The Panasonic 2SD1263AQ is a silicon NPN triple diffusion planar power transistor designed for high-voltage amplification. It features a collector-base voltage of 350 V and a collector-emitter voltage of 250 V, with a maximum collector current of 0.75 A. The device utilizes a TO-220F-A1 full-pack package that allows direct mounting to a heat sink using a single screw. Electrical characteristics include a forward current transfer ratio (hFE) ranging from 40 to 250 depending on the rank, a transition frequency of 30 MHz, and a collector power dissipation of 35 W at 25°C case temperature.

Single Bipolar Transistors Feature Summary

• High collector-base voltage capability for robust operation in demanding circuits
• Full-pack package design enabling secure installation to a heat sink with one screw
• Silicon NPN triple diffusion planar construction for stable performance

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment requiring high-voltage switching
• Office equipment and measuring instruments

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AQ' against the manufacturer's official documentation to confirm exact binning or packaging specifications. Confirm compliance status with current RoHS directives as indicated in the datasheet. Check the manufacturer's website for the latest lifecycle stage information, as this component may be subject to maintenance or discontinuation plans.

Single Bipolar Transistors Selection Notes

Select the 2SD1263A variant if a higher collector-base voltage rating of 400 V is required instead of the standard 350 V. Ensure the thermal management solution supports the specified 35 W dissipation limit at the designated case temperature. Verify that the application does not involve aerospace, automotive, or life-support systems, which are explicitly excluded from standard use recommendations.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1263 series of silicon NPN transistors. It is specifically engineered for power amplification applications where high voltage handling and efficient heat dissipation are critical. The device complements other components in general-purpose electronic designs, offering reliable performance within its defined absolute maximum ratings.

Single Bipolar Transistors Replacement Considerations

Consult the manufacturer's official cross-reference data for verified substitute part numbers. Do not assume functional equivalence with other NPN transistors without verifying pinout compatibility and electrical parameter alignment.

Single Bipolar Transistors FAQ

What is the difference between the 2SD1263 and 2SD1263A models?

The primary difference lies in the voltage ratings. The 2SD1263 has a collector-base voltage of 350 V and a collector-emitter voltage of 250 V, while the 2SD1263A offers higher ratings of 400 V and 300 V, respectively.

How is the hFE rank determined for this transistor?

The forward current transfer ratio (hFE) is classified into ranks R, Q, and P based on measurements taken at VCE = 10 V and IC = 0.3 A. Rank R ranges from 40 to 90, Q from 70 to 150, and P from 120 to 250.

What package type is used for the 2SD1263AQ?

The component uses the TO-220F-A1 package, also known as EIAJ SC-67. This is a full-pack package designed to be mounted directly onto a heat sink using a single screw.