2SD1267AP

Single Bipolar Transistors Overview

The Panasonic 2SD1267AP is a silicon NPN triple diffusion planar power transistor designed for power amplification. It features a TO-220F-A1 (SC-67) full-pack package with an isolated collector for direct heat sink mounting. The device supports a maximum collector current of 4A and peak currents up to 8A. Electrical ratings include a collector-emitter voltage of 60V, a collector-base voltage of 60V, and a collector power dissipation of 40W at 25°C case temperature. The component operates within a junction temperature range of -55°C to +150°C.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio (hFE) with satisfactory linearity across operating ranges.
• Low collector-emitter saturation voltage (VCE(sat)) for efficient power handling.
• Full-pack package design allowing installation to a heat sink using a single screw.

Single Bipolar Transistors Applications

• Power amplification circuits
• General electronic equipment
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'P' against official documentation to confirm packaging details such as tape-and-reel specifications or bulk packing variations. Confirm the exact lifecycle stage, as this series includes maintenance and discontinued types. Ensure compliance with RoHS Directive requirements for the intended market. Consult the manufacturer's latest Product Standards before finalizing procurement to validate current availability and specification updates.

Single Bipolar Transistors Selection Notes

Select the 2SD1267AP when designing power amplification stages requiring high hFE linearity and low saturation voltage. The TO-220F-A1 package is suitable for applications needing robust thermal management via direct heat sink mounting. Consider the complementary 2SB0942/2SB0942A PNP transistors for push-pull configurations. Evaluate the transition frequency and switching times if the application involves signal processing beyond standard audio frequencies.

Single Bipolar Transistors Part Context

This component belongs to the Panasonic 2SD1267 series of silicon NPN power transistors. It is specifically engineered for power amplification tasks. The series is complemented by the 2SB0942 and 2SB0942A PNP transistors, facilitating matched pair designs in amplifier circuits. The technology utilizes a triple diffusion planar process to ensure stable performance characteristics.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB0942 and 2SB0942A as complementary parts for circuit pairing. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector power dissipation?

The maximum collector power dissipation is 40 W when the case temperature is maintained at 25°C.

How is the device packaged for thermal management?

It uses a TO-220F-A1 (SC-67) full-pack package that allows installation to a heat sink with one screw.

What is the complementary PNP transistor for this series?

The 2SB0942 and 2SB0942A are the complementary PNP transistors specified for use with this NPN device.