Single Bipolar Transistors 2SD1383KT146B product image

2SD1383KT146B

$0.62
  • Description:TRANS NPN DARL 32V 0.3A SMT3
  • Series:-

SKU:1f15651ce9f1 Category: Brand:

  
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2SD1383KT146B is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN DARL 32V 0.3A SMT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1383KT146B

  • Description:TRANS NPN DARL 32V 0.3A SMT3
  • Series:-
  • Mfr:Rohm Semiconductor
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Transistor Type:NPN - Darlington
  • Current - Collector (Ic) (Max):300 mA
  • Voltage - Collector Emitter Breakdown (Max):32 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 400µA, 200mA
  • Current - Collector Cutoff (Max):1µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:5000 @ 100mA, 5V
  • Power - Max:200 mW
  • Frequency - Transition:250MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SMT3
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1383KT146B

2SD1383KT146B

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD1383KT146B is a high-gain NPN Darlington amplifier transistor housed in an SOT-346 (SMT3) surface-mount package. It features a built-in 4 kΩ base-to-emitter resistor and complements the 2SB852K PNP device. Key electrical ratings include a collector-emitter voltage of 32 V, a continuous collector current of 0.3 A, and a power dissipation of 200 mW at 25°C. The DC current gain (hFE) ranges from 1,000 to 5,000, with a transition frequency of 250 MHz.

Single Bipolar Transistors Feature Summary

  • Darlington connection architecture providing high DC current gain for sensitive signal amplification.
  • Integrated 4 kΩ internal resistor connected between the base and emitter terminals.
  • Designed as a complementary pair component to the 2SB852K PNP transistor.

Single Bipolar Transistors Applications

  • High gain amplifier circuits
  • Audio signal processing stages
  • General-purpose low-power switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T146B' against official documentation to confirm tape-and-reel specifications and marking codes. Confirm RoHS compliance status directly with the manufacturer or authorized distributors before procurement. Ensure storage conditions remain within recommended limits to maintain solderability prior to assembly.

Single Bipolar Transistors Selection Notes

Select this component when a compact SOT-346 footprint is required alongside high current gain characteristics. The integrated base-emitter resistor simplifies biasing networks by preventing floating base issues. Consider the 32 V collector-emitter rating and 200 mW power dissipation limits when designing thermal management strategies for sealed environments.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1383K series of high-gain amplifier transistors manufactured by ROHM Semiconductor. The series utilizes silicon planar technology optimized for surface-mount applications. The standard 2SD1383K serves as the base model, while the T146B variant specifies the particular taping code and reel configuration for automated manufacturing processes.

Single Bipolar Transistors Replacement Considerations

The datasheet explicitly identifies the 2SB852K as its complementary counterpart. No direct single-transistor replacements are listed in the provided documentation. Verify pinout compatibility and electrical parameters if substituting with generic Darlington pairs.

2SD1383KT146B2SD1383KT146B
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