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2SD1625-TD-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is NPN 0.7A 50V DARLINGTON. Review the specifications below when checking this part for your BOM.
The 2SD1625-TD-E is an NPN epitaxial planar silicon transistor from SANYO Semiconductor, designed for driver applications. It features a collector-to-emitter voltage of 50 V and a continuous collector current of 0.7 A. The device offers high DC current gain (hFE) ranging from 3000 to 4000 at 500 mA, with a gain-bandwidth product up to 200 MHz. It supports a pulse collector current of 2 A and operates within a junction temperature range of -55°C to +150°C.
Verify the manufacturer origin carefully, as the datasheet identifies SANYO Semiconductor Co., Ltd. while the prompt specifies onsemi. Confirm that the TD-E suffix corresponds to the tape-and-reel packaging format indicated by standard industry conventions for this part number lineage. Ensure the component meets the specific electrical requirements for your circuit design before procurement.
Select this component for applications requiring high current gain and compact form factors. The ultrasmall package facilitates high-density PCB layouts. Consider the 50 V collector-to-emitter voltage rating and 0.7 A continuous current limit when designing the load circuit. The wide safe operating area provides robustness against transient conditions in driver circuits.
This NPN transistor belongs to the 2SB1125/2SD1625 complementary pair series manufactured by SANYO Semiconductor. It is engineered specifically for driver applications where space constraints and high performance are critical. The epitaxial planar construction ensures reliable operation across a wide temperature range, making it suitable for various electronic equipment.
The 2SCR587D3 is listed as a similar level replacement with the same package type. Verify compatibility regarding collector-emitter voltage and current ratings before substitution.
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