2SD1763AE

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD1763AE is an Epitaxial Planar NPN Silicon Transistor designed for high-frequency power applications. It features a TO-252 (DPAK) surface-mount package with a maximum collector current of 3.0 A and a collector-emitter voltage rating of 120 V. The device offers a DC current gain (hFE) range of 120 to 390, ensuring reliable amplification performance. With a power dissipation capacity of 10 W and an operating temperature range from -55°C to +150°C, it supports robust thermal management in compact designs.

Single Bipolar Transistors Feature Summary

• Epitaxial planar NPN silicon construction for stable high-frequency operation
• Surface-mount DPAK package optimized for automated placement machines
• High collector current capability suitable for power switching tasks

Single Bipolar Transistors Applications

• General-purpose power amplification circuits
• Switching regulators and power supplies
• Automated assembly line components requiring taped packaging

Single Bipolar Transistors Procurement Notes

Verify the specific suffix 'AE' against the manufacturer's official documentation to confirm tape-and-reel specifications and exact binning grades. Ensure compatibility with standard SMD reflow profiles and check for any RoHS compliance declarations relevant to the production batch. Confirm that the component meets the required storage temperature limits during handling.

Single Bipolar Transistors Selection Notes

Select this transistor when a 120 V, 3 A NPN switch is required in a compact surface-mount form factor. The 10 W power dissipation rating allows for efficient heat management without external heatsinks in moderate load scenarios. Consider the hFE range of 120 to 390 for biasing stability in amplifier stages. Verify that the TO-252 footprint matches the target PCB layout constraints.

Single Bipolar Transistors Part Context

This component belongs to ROHM's general-purpose epitaxial planar transistor series, often paired with complementary PNP types like the 2SB1186A. It is engineered for use in automatic placement equipment, indicating standardized packaging for high-volume manufacturing. The device serves as a core switching element in consumer electronics and industrial control systems where space efficiency is critical.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Cross-reference with the 2SD1763A datasheet for mechanical and electrical equivalence if the 'AE' suffix denotes only packaging variations.