2SD1767T100R

$0.87

Description：TRANS NPN 80V 0.7A MPT3
Series：-

SKU:4ad57e9eee0e Category: Single Bipolar Transistors Brand: Rohm Semiconductor

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Product introduction

2SD1767T100R is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Rohm Semiconductor. Its product description is TRANS NPN 80V 0.7A MPT3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1767T100R

Description：TRANS NPN 80V 0.7A MPT3
Series：-
Mfr：Rohm Semiconductor
Package：Tape & Reel (TR),Cut Tape (CT)
Transistor Type：NPN
Current - Collector (Ic) (Max)：700 mA
Voltage - Collector Emitter Breakdown (Max)：80 V
Vce Saturation (Max) @ Ib, Ic：400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)：500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：180 @ 100mA, 3V
Power - Max：2 W
Frequency - Transition：120MHz
Operating Temperature：150°C (TJ)
Mounting Type：Surface Mount
Package / Case：TO-243AA
Supplier Device Package：MPT3
Grade：-
Qualification：-

Single Bipolar Transistors datasheet and documents for 2SD1767T100R

2SD1767T100R

Single Bipolar Transistors Overview

The ROHM Semiconductor 2SD1767T100R is a single NPN silicon medium power transistor housed in an MPT3 (SC-62) surface-mount package. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 0.7A. The device supports a maximum junction temperature of 150°C and operates within a storage range of -55°C to +150°C. Electrical characteristics include a DC current gain ranging from 120 to 390, a transition frequency of 120MHz, and a collector-emitter saturation voltage of 0.4V under specified conditions.

Single Bipolar Transistors Feature Summary

High breakdown voltage capability with a collector-emitter rating of 80V
Medium power handling supporting up to 0.7A continuous collector current
Complements the 2SB1189 and 2SB1238 PNP transistors for push-pull applications

Single Bipolar Transistors Applications

General-purpose medium power amplification circuits
Switching applications requiring high voltage tolerance
Push-pull amplifier stages paired with complementary PNP devices

Single Bipolar Transistors Procurement Notes

Verify component authenticity through authorized channels as counterfeit components exist. Confirm RoHS compliance status via official documentation before integration. Ensure thermal management aligns with the 0.5W dissipation limit on standard PCBs. Review datasheet specifications regarding safe operating area limits during design validation.

Single Bipolar Transistors Selection Notes

Select this component when circuit requirements demand an 80V NPN transistor with moderate current handling in a compact SMD form factor. Consider the MPT3 package constraints for thermal performance. Evaluate the hFE range of 120 to 390 against base drive capabilities. Verify compatibility with the intended switching or amplification frequencies relative to the 120MHz transition frequency.

Single Bipolar Transistors Part Context

This part belongs to ROHM's medium power transistor series designed for general electronic equipment. It serves as the NPN counterpart to the 2SB1189 and 2SB1238 PNP devices. The MPT3 package provides a small footprint suitable for space-constrained printed circuit board layouts while maintaining adequate thermal characteristics for low-to-medium power tasks.