2SD1773

Single Bipolar Transistors Overview

The Panasonic 2SD1773 is a Silicon NPN triple diffusion planar type Darlington transistor designed for medium-speed switching applications. It features a collector-emitter sustaining voltage of 120 V and a continuous collector current rating of 8 A, with a peak collector current capability of 12 A. The device offers a high forward current transfer ratio (hFE) ranging from 1,000 to 20,000 at 4 A. Key electrical characteristics include a transition frequency of 20 MHz and a maximum collector power dissipation of 50 W at 25°C. It is housed in a TO-220F-A1 package.

Single Bipolar Transistors Feature Summary

• High forward current transfer ratio hFE
• High-speed switching capability
• Full-pack package suitable for heat sink installation with one screw

Single Bipolar Transistors Applications

• Medium-speed switching circuits
• Complementary pairing with 2SB1193 PNP transistors

Single Bipolar Transistors Procurement Notes

Verify the specific lifecycle status on the official Panasonic semiconductor website before procurement, as this component may be classified under maintenance or discontinued stages. Confirm that the TO-220F-A1 package dimensions match your thermal management requirements. Ensure compliance with RoHS Directive standards if required by your manufacturing process.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN Darlington configuration is required for medium-speed switching tasks. Consider the 120 V collector-emitter voltage and 8 A continuous current limits to ensure safe operation within the specified junction temperature range. Evaluate the thermal resistance characteristics against your available heat sinking solutions to maintain performance.

Single Bipolar Transistors Part Context

This part belongs to the Panasonic Power Transistors series, specifically utilizing silicon NPN triple diffusion planar technology. It serves as the complementary counterpart to the 2SB1193 PNP transistor, facilitating push-pull or bridge circuit designs. The device is engineered for general electronic equipment and standard applications requiring robust switching performance.

Single Bipolar Transistors Replacement Considerations

The datasheet identifies the 2SB1193 as the complementary PNP transistor. No other direct substitute part numbers are documented in the provided source material.

Single Bipolar Transistors FAQ

What is the maximum collector-emitter sustaining voltage?

The collector-emitter sustaining voltage (VCEO(SUS)) is rated at 120 V under conditions of IC = 2 A, RBE = ∞, and L = 10 mH.

How does the forward current transfer ratio vary?

The forward current transfer ratio (hFE) ranges from a minimum of 1,000 to a typical maximum of 20,000 when measured at VCE = 3 V and IC = 4 A.

What is the transition frequency of the device?

The transition frequency (fT) is 20 MHz, measured at VCE = 10 V, IC = 1 A, and f = 1 MHz.