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2SD1803S-E is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 5A TP. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1803S-E is a single NPN silicon bipolar junction transistor housed in a TP (TO-251) surface-mount package. It supports a maximum collector current of 5 A and a collector-to-emitter voltage of 50 V. The device features a gain-bandwidth product of 180 MHz and a collector-to-emitter saturation voltage of up to 400 mV at 3 A. It operates with a junction temperature rating of 150 °C and dissipates 1 W at ambient temperature.
Verify the specific suffix 'E' indicates lead-free compliance as documented in the ordering information. Confirm the TP package type matches the required footprint. Check for end-of-life status or alternative sourcing options, as availability may vary by region and distributor.
Select this component for circuits requiring robust NPN switching with low saturation losses. Ensure the thermal design accommodates the 1 W dissipation limit at ambient conditions. Verify that the 50 V breakdown voltage meets the circuit's peak voltage requirements under all operating conditions.
This part belongs to the 2SD1803 series from onsemi, designed alongside the complementary 2SB1203 PNP transistor. The series targets general-purpose power switching needs within a compact form factor. It serves as a standard solution for medium-power discrete semiconductor applications.
Public confirmed substitute part numbers: 2SD1803T-TL-H.
The maximum continuous collector current is rated at 5 A.
The datasheet specifies that the 'E' suffix denotes lead-free compliance, while the 'H' suffix denotes both lead-free and halogen-free construction.
The gain-bandwidth product (fT) is typically 180 MHz when measured at 5 V and 1 A.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.