2SD1816S-E

Single Bipolar Transistors Overview

The onsemi 2SD1816S-E is a single NPN bipolar junction transistor designed for high-current switching applications. It features a collector-emitter voltage of 100 V and a continuous collector current rating of 4 A, with a peak pulse current capability of 8 A. The device operates within a junction temperature range up to 150 °C and dissipates 1 W at case temperatures of 25 °C. Key electrical characteristics include a gain-bandwidth product of 180 MHz and low saturation voltages, such as a maximum VCE(sat) of 400 mV under specified test conditions.

Single Bipolar Transistors Feature Summary

• Low collector-to-emitter saturation voltage for efficient power handling
• High transition frequency supporting fast switching operations
• Good linearity of DC current gain across operating ranges
• Compact slim package design facilitating equipment miniaturization

Single Bipolar Transistors Applications

• Relay drivers
• High speed inverters
• Converters
• General high current switching applications

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging type and environmental compliance. The 'S' suffix indicates bag packing in the IPAK/TP package, while 'T' denotes tape and reel options. Confirm RoHS and halogen-free status requirements prior to procurement, as these attributes vary by suffix designation in the manufacturer's ordering guide.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching capabilities with moderate voltage ratings. The device is suitable for applications demanding low saturation voltage to minimize conduction losses. Ensure thermal management strategies account for the 1 W dissipation limit at 25 °C case temperature. Verify that the required hFE rank aligns with the specific circuit biasing needs.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1816 series, which shares specifications with the complementary 2SB1216 PNP transistor. Both devices utilize similar silicon technology and are housed in identical IPAK or DPAK packages. They are engineered as matched pairs for push-pull configurations, ensuring consistent performance characteristics between the NPN and PNP variants in symmetric circuit designs.

Single Bipolar Transistors Replacement Considerations

The 2SB1216 serves as the direct complementary PNP counterpart within the same datasheet. Designers should verify pinout compatibility and thermal resistance values when substituting components. Cross-referencing absolute maximum ratings and switching times is essential to ensure equivalent performance in existing layouts.