2SD1830

Single Bipolar Transistors Overview

The onsemi 2SD1830 is an NPN epitaxial planar silicon Darlington transistor designed for driver applications. It features a collector-to-emitter voltage of 100 V and a continuous collector current capacity of 8 A, with a peak pulse current rating of 12 A. The device provides a high DC current gain ranging from 1500 to 4000 at 4 A. Electrical characteristics include a maximum collector-to-emitter saturation voltage of 1.5 V and a base-to-emitter saturation voltage of 2.0 V under specified conditions. The component operates within a junction temperature range up to 150 °C and utilizes a TO-220ML package.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for low drive current requirements
• Large current capacity combined with a wide safe operating area
• Low saturation voltage for efficient power handling
• Micaless package design facilitating direct mounting to heat sinks

Single Bipolar Transistors Applications

• Motor driver control circuits
• Printer hammer drivers
• Relay drivers
• Constant-voltage regulators

Single Bipolar Transistors Procurement Notes

Verify the manufacturer origin carefully, as SANYO Semiconductor assets were acquired by onsemi. Confirm the specific ordering suffix matches the required package variant. Ensure the component meets RoHS compliance standards if applicable to your assembly process. Cross-reference the datasheet revision date against your bill of materials to ensure specification consistency.

Single Bipolar Transistors Selection Notes

Select this component when high current switching capability is required alongside substantial current gain. The wide safe operating area supports robust performance in inductive load environments. Consider the thermal dissipation capabilities provided by the TO-220ML package for effective heat management during continuous operation.

Single Bipolar Transistors Part Context

This part belongs to the SANYO Semiconductor (now onsemi) Darlington transistor series. It is functionally paired with the 2SB1228 PNP counterpart. The device utilizes epitaxial planar silicon technology optimized for high-speed switching and high-current driver applications in industrial and consumer electronics.

Single Bipolar Transistors Replacement Considerations

The 2SB1228 serves as the complementary PNP device within the same product family. Verify pinout compatibility and thermal resistance values when substituting with other NPN Darlington transistors offering similar voltage and current ratings.

Single Bipolar Transistors FAQ

What is the maximum collector current rating?

The 2SD1830 supports a continuous collector current of 8 A and a peak pulse current of 12 A.

Does the package contain mica insulation?

No, the device utilizes a micaless package design to facilitate easier mounting onto heat sinks.

What is the typical DC current gain?

The DC current gain ranges from a minimum of 1500 to a maximum of 4000 when tested at a collector current of 4 A.