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2SD1835T is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 2A 3-NP. Review the specifications below when checking this part for your BOM.
The onsemi 2SD1835T is an NPN single bipolar transistor housed in the NP package, a variant of the TO-92 form factor. It supports a maximum collector current of 2 A and withstands up to 50 V collector-to-emitter voltage. The device features a low collector-to-emitter saturation voltage of 0.4 V at 1 A and offers a gain-bandwidth product of 150 MHz. Designed for high-speed switching, it exhibits a turn-on time of 60 ns and a fall time of 30 ns. Maximum power dissipation is rated at 0.75 W with a junction temperature limit of 150 °C.
Verify the specific ordering suffix 'T' against official documentation to confirm tape-and-reel packaging versus bag packing configurations. Ensure the selected component matches the required hFE rank (R, S, T, or U) for your circuit's gain specifications. Cross-reference the NP package dimensions with your PCB footprint requirements before finalizing procurement decisions.
Select this component when designing circuits requiring robust NPN switching capabilities within a compact through-hole package. Consider its 2 A continuous current rating and 50 V breakdown voltage for medium-power applications. Evaluate the low saturation voltage characteristics to minimize conduction losses in high-efficiency designs compared to standard general-purpose transistors.
This part belongs to the 2SD1835 family manufactured by onsemi. It serves as a high-current switching solution utilizing advanced semiconductor processes. The device complements other components in driver and regulator topologies where reliable performance under moderate voltage stress is essential for long-term operational stability.
Consult official substitution lists for verified equivalents. Generic replacements may differ in saturation voltage or switching speed.
The DC current gain (hFE) ranges from 100 to 560, classified into ranks R, S, T, and U based on measurement at 100 mA.
It features a turn-on time of 60 ns and a fall time of 30 ns, supporting fast switching applications.
The absolute maximum collector current is 2 A, with a pulse current rating of 3 A.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.