Single Bipolar Transistors 2SD1835T product image

2SD1835T

$0.10
  • Description:TRANS NPN 50V 2A 3-NP
  • Series:-

SKU:35b03ed57efd Category: Brand:

  
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2SD1835T is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 50V 2A 3-NP. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for 2SD1835T

  • Description:TRANS NPN 50V 2A 3-NP
  • Series:-
  • Mfr:onsemi
  • Package:Bulk,Bulk
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):2:00 AM
  • Voltage - Collector Emitter Breakdown (Max):50 V
  • Vce Saturation (Max) @ Ib, Ic:400mV @ 50mA, 1A
  • Current - Collector Cutoff (Max):100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:200 @ 100mA, 2V
  • Power - Max:750 mW
  • Frequency - Transition:150MHz
  • Operating Temperature:150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package:3-NP
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for 2SD1835T

2SD1835T

Single Bipolar Transistors Overview

The onsemi 2SD1835T is an NPN single bipolar transistor housed in the NP package, a variant of the TO-92 form factor. It supports a maximum collector current of 2 A and withstands up to 50 V collector-to-emitter voltage. The device features a low collector-to-emitter saturation voltage of 0.4 V at 1 A and offers a gain-bandwidth product of 150 MHz. Designed for high-speed switching, it exhibits a turn-on time of 60 ns and a fall time of 30 ns. Maximum power dissipation is rated at 0.75 W with a junction temperature limit of 150 °C.

Single Bipolar Transistors Feature Summary

  • Utilizes FBET and MBIT processes for enhanced performance
  • Provides large current capacity suitable for demanding loads
  • Features low collector-to-emitter saturation voltage for efficiency
  • Delivers fast switching times for rapid signal response

Single Bipolar Transistors Applications

  • Voltage regulators
  • Relay drivers
  • Lamp drivers
  • General electrical equipment

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix 'T' against official documentation to confirm tape-and-reel packaging versus bag packing configurations. Ensure the selected component matches the required hFE rank (R, S, T, or U) for your circuit's gain specifications. Cross-reference the NP package dimensions with your PCB footprint requirements before finalizing procurement decisions.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring robust NPN switching capabilities within a compact through-hole package. Consider its 2 A continuous current rating and 50 V breakdown voltage for medium-power applications. Evaluate the low saturation voltage characteristics to minimize conduction losses in high-efficiency designs compared to standard general-purpose transistors.

Single Bipolar Transistors Part Context

This part belongs to the 2SD1835 family manufactured by onsemi. It serves as a high-current switching solution utilizing advanced semiconductor processes. The device complements other components in driver and regulator topologies where reliable performance under moderate voltage stress is essential for long-term operational stability.

Single Bipolar Transistors Replacement Considerations

Consult official substitution lists for verified equivalents. Generic replacements may differ in saturation voltage or switching speed.

Single Bipolar Transistors FAQ

What is the DC current gain range for the 2SD1835T?

The DC current gain (hFE) ranges from 100 to 560, classified into ranks R, S, T, and U based on measurement at 100 mA.

How does the 2SD1835T perform in terms of switching speed?

It features a turn-on time of 60 ns and a fall time of 30 ns, supporting fast switching applications.

What is the maximum collector current rating?

The absolute maximum collector current is 2 A, with a pulse current rating of 3 A.

2SD1835T2SD1835T
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