2SD20000P

Single Bipolar Transistors Overview

The Panasonic 2SD2000P is a silicon NPN triple diffusion planar power transistor designed for high-speed switching applications. It features a TO-220F-A1 (EIAJ SC-67) package with a collector-emitter voltage of 60 V and a continuous collector current rating of 4 A. The device supports a peak collector current of 8 A and offers a maximum collector power dissipation of 35 W at 25°C. Electrical characteristics include a transition frequency of 80 MHz, a forward current transfer ratio ranging from 70 to 250 depending on the rank, and a saturation voltage of 1.5 V at 4 A.

Single Bipolar Transistors Feature Summary

• High-speed switching capability suitable for rapid circuit transitions
• Satisfactory linearity of the forward current transfer ratio across operating ranges
• Large collector power dissipation capacity for thermal management
• Full-pack package design allowing direct heat sink installation using a single screw

Single Bipolar Transistors Applications

• General electronic equipment
• Office equipment
• Communications equipment
• Measuring instruments
• Household appliances

Single Bipolar Transistors Procurement Notes

Verify the specific hFE rank (Q or P) required for your circuit design, as the datasheet specifies distinct gain ranges for each classification. Confirm that the TO-220F-A1 package dimensions align with your PCB layout and thermal interface requirements. Ensure compliance with RoHS directives if applicable to your manufacturing standards. Review the absolute maximum ratings carefully to prevent exceeding limits during transient states such as power-on or mode-switching.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN power switch with moderate voltage handling and high current capacity is needed. The TO-220F-A1 package facilitates efficient heat dissipation through direct mounting to a heatsink. Consider the hFE rank based on base drive requirements; Rank Q provides lower gain while Rank P offers higher gain. Evaluate the thermal resistance curves to determine appropriate cooling solutions for sustained operation above ambient temperatures.

Single Bipolar Transistors Part Context

This transistor belongs to the Panasonic 2SD2000 series of silicon NPN power transistors. It utilizes a triple diffusion planar technology optimized for power switching performance. The device is manufactured by Panasonic Electronic Components and is intended for standard commercial and industrial applications rather than specialized automotive or aerospace environments requiring exceptional reliability.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.

Single Bipolar Transistors FAQ

What is the difference between Rank Q and Rank P?

Rank Q has a minimum forward current transfer ratio (hFE1) of 70, while Rank P has a minimum hFE1 of 120. Both ranks share the same maximum hFE1 value of 250.

How is the package mounted to a heat sink?

The TO-220F-A1 package is designed to be installed onto a heat sink using a single screw, providing a secure mechanical and thermal connection.

What is the maximum collector-base voltage?

The maximum collector-base voltage (V_CBO) with the emitter open is 80 V.