2SD2012-BP

Single Bipolar Transistors Overview

The 2SD2012-BP is an NPN silicon power transistor manufactured by Micro Commercial Components. It features a collector-emitter voltage (VCEO) of 60 V and a collector current (IC) rating of 3.0 A. The device provides a minimum DC current gain (hFE) of 100 at IC=0.5A and 20 at IC=2.0A. Collector-emitter saturation voltage (VCE(sat)) is typically 0.4 V with a maximum of 1.0 V under specified conditions. Power dissipation reaches 25 W at TC=25°C. It utilizes a TO-220 package.

Single Bipolar Transistors Feature Summary

• High DC current gain capability for efficient signal amplification
• Low collector-emitter saturation voltage to minimize conduction losses
• High power dissipation capacity suitable for thermal management

Single Bipolar Transistors Applications

• General purpose switching applications
• Audio frequency power amplifier circuits
• Power supply output stages

Single Bipolar Transistors Procurement Notes

Verify the authenticity of the 2SD2012-BP component through authorized MCC distributors or direct procurement channels. Counterfeit semiconductor parts pose significant risks; ensure traceability and quality standards are met. Confirm that the ordering suffix '-BP' corresponds to bulk packaging containing 1,000 pieces per box as documented in the official datasheet.

Single Bipolar Transistors Selection Notes

Select this component when a robust NPN power transistor with a 60 V breakdown voltage and 3 A continuous current capability is required. The low saturation voltage makes it suitable for applications where minimizing on-state power loss is critical. Ensure the design accommodates the 25 W power dissipation rating with appropriate thermal management strategies.

Single Bipolar Transistors Part Context

The 2SD2012 is a silicon NPN power transistor designed for general-purpose high-power applications. Manufactured by Micro Commercial Components, it offers reliable performance in switching and amplification roles. The device is housed in a TO-220 package, facilitating effective heat dissipation for sustained operation under load.

Single Bipolar Transistors Replacement Considerations

Publicly confirmed substitute part numbers for the 2SD2012 include 2SD2012 from STMicroelectronics and Toshiba Semiconductor. These alternatives share similar electrical characteristics and pin configurations, allowing for potential interchangeability in existing designs.