2SD2014

Single Bipolar Transistors Overview

The Sanken Electric USA Inc. 2SD2014 is a silicon NPN triple diffused planar transistor housed in a TO-220F package. It features a collector-emitter breakdown voltage of 80V and a continuous collector current rating of 4A. The device provides a minimum DC current gain (hFE) of 2000 at 3A and operates with a maximum power dissipation of 25W at 25°C case temperature. Its high-speed switching characteristics include a typical transition frequency of 75MHz, making it suitable for demanding driver applications.

Single Bipolar Transistors Feature Summary

• High DC current gain capability up to 2000 minimum at 3A collector current
• Triple diffused planar construction for robust performance
• Fast switching speed with a typical transition frequency of 75MHz
• Designed as the complementary pair to the 2SB1257 PNP transistor

Single Bipolar Transistors Applications

• Driver circuits for solenoids
• Relay driver stages
• Motor driver interfaces
• Series voltage regulators
• General purpose amplification

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to ensure correct pinout and thermal pad configuration. Confirm RoHS compliance status if required by your assembly process. Cross-reference the datasheet revision date to ensure all electrical limits match your design requirements before finalizing procurement.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is needed for driving inductive loads like motors or relays. Ensure the application circuit can handle the 80V collector-emitter breakdown voltage. Consider the thermal resistance characteristics if operating near the 4A limit without adequate heatsinking. Verify that the base drive current meets the saturation requirements for low VCE(sat).

Single Bipolar Transistors Part Context

This part belongs to Sanken's discrete bipolar transistor lineup, specifically designed for power switching applications. It serves as the NPN complement to the 2SB1257, allowing for push-pull configurations in amplifier and regulator topologies. The TO-220F package facilitates direct mounting to heatsinks for efficient thermal management during high-current operation.

Single Bipolar Transistors Replacement Considerations

No public confirmed substitute part numbers are available in the provided source material.